Monolithic semiconductor infrared emitter pumped by a switched solid microlaser
AssigneeCommissariat a l'Energie Atomique
InventorsEngin Molva, Jean-Louis Pautrat
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Abstract
The invention relates to a device for an infrared light emitter comprising a semiconductor element (12) able to emit infrared radiation and a switched microlaser (2, 4, 6, 8) arranged so as to be able to optically pump the semiconductor element.
Claims44
Device for an infrared light emitter including a semiconductor element emitting infrared radiation and a microlaser, said microlaser comprising a switching means, an input face and an output face, said microlaser outputting a laser beam optically pumping the semiconductor element, the semiconductor element comprising one of Pb.sub.x Sn.sub.1-x Se, Pb.sub.x Sn.sub.1-x Te, PbS.sub.1-x Se.sub.x, InAs.sub.x Sb.sub.1-x, Cd.sub.x Hg.sub.1-x Te, Cd.sub.x Pb.sub.1-x dS, and Bi.sub.1-x Sb.sub.x (0.ltoreq.x.ltoreq.1) and the device operating at a temperature T>160 K.
Device for an infrared light emitter including a semiconductor element emitting infrared radiation and a microlaser, said microlaser comprising a switching means, an input face and an output face, said microlaser outputting a laser beam for optically pumping the semiconductor element, the semiconductor element being directly fixed to the output face of the microlaser.
Device for an infrared light emitter including a semiconductor element emitting infrared radiation and a microlaser, said microlaser comprising a switching means, an input face and an output face, said microlaser outputting a laser beam for optically pumping the semiconductor element, optical means for shaping said microlaser beam emitted by said microlaser being provided between the microlaser and the semiconductor element.
Device for an infrared light emitter including a semiconductor element emitting infrared radiation and a microlaser, said microlaser comprising an active switching means, an input face and an output face, said microlaser outputting a laser beam for optically pumping the semiconductor element, wherein the active switching means is an active laser medium of a first material having a first optical index which forms a first resonant cavity between an input mirror and an intermediate mirror, a second material has a second optical index and forms a second resonant cavity between the intermediate mirror and an output mirror said second optical index of said second material is modulated by one of an electric field, a magnetic field and a pressure variation, and a laser beam reduction means located at the input of the first resonant cavity, the assembly of said two cavities and of said laser beam reduction means being monolithic.
Dependencies are inferred from the claim text.