Ultra fast shift register using resonant tunnel diodes
AssigneeTexas Instruments Incorporation
InventorsHao Tang, Tom P. E. Broekaert
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Abstract
A high speed digital static shift register includes a series-connected pair of resonant tunneling diodes (RTDs) 22, 24 to achieve a bistable operating state. A clocked switch 20 provides the means of setting the binary state of this bistable pair. In order for one bistable pair to drive a following pair, a method of providing isolation and gain using a buffer amplifier 26 between the two pairs of RTDs is also provided. In one embodiment, the buffer amplifier comprises enhancement FET 30 and depletion load FET 28.
Claims15
A storage cell for use in a high speed digital static shift register, said storage cells comprising:
- a static latch formed of a pair of series-connected negative resistance devices coupled between first and second potentials;
- means for setting the binary state of said static latch in accordance with the level of an input signal;
- and
- means coupled to said static latch for providing isolation from and gain to a subsequent static latch.
A high speed digital static shift register comprising:
- a plurality of storage cells coupled in cascade configuration, each storage cell comprising
- (a) a static latch formed of a pair of series-connected negative resistance devices coupled between first and second potentials;
- (b) means for setting the binary state of said static latch in accordance with the output level of the static latch of the preceding cell of said cascade;
- and
- (c) means coupled to said static latch for providing isolation from and gain to the static latch of the subsequent cell of said cascade.
Dependencies are inferred from the claim text.