US 5,929,519 AGranted

Semiconductor module including switching device chips and diode chips

AssigneeHitchi, Ltd.

InventorsMutsuhiro Mori, Ryuichi Saito, Shin Kimura, Syuuji Saitoo, Kiyoshi Nakata, Akira Horie, Yoshihiko Koike, Shigeki Sekine

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Abstract

An inverter device includes plural modules, each module being formed by a series circuit having a parallel circuit of a switching device and a first diode, and a parallel circuit of a second switching device and a second diode, allowing a reduced size, high reliability, high frequency switching and low noise. Each of the semiconductor modules includes a plurality of switching device chips and at least one diode chip formed on a metal substrate. Electrode plates are provided in locations of the module adjacent to the switching device chips and the diode chips to facilitate connection of the electrodes of the respective chips to one another and to the outside of the module.

Claims11

Dependent claims

A semiconductor module comprising:

a metal substrate;
a plurality of switching device chips each having a pair of principal surfaces and a pair of main electrodes, one of said main electrodes being disposed on one principal surface and the other of said main electrodes and a control electrode being disposed on the other principal surface, said switching device chips each being disposed on said metal substrate through a buffer plate having a thermal expansion coefficient close to that of a semiconductor material;
at least one diode chip having a pair of principal surfaces and a pair of main electrodes, one of said main electrodes being disposed on one principal surface and the other of said main electrodes being disposed on the other principal surface, said at least one diode chip being disposed on said metal substrate through a buffer plate having a thermal expansion coefficient close to that of a semiconductor material;
a first electrode plate disposed on said metal substrate through an insulating plate, and extending adjacent to said switching device chips and said at least one diode chip;
a second electrode plate disposed on said metal substrate through an insulating plate, separated from the first electrode plate, and extending adjacent to said switching device chips;
first connecting conductors connecting the other main electrodes of said switching device chips and the at least one diode chip with the first electrode plate;
second connecting conductor connecting the control electrodes of said switching device chips with the second electrode plate;
a first extension terminal disposed on said metal substrate and extending in a direction substantially at a right angle to said metal substrate;
a second extension terminal, extending in a direction substantially at a right angle to said first electrode plate, and disposed on a portion of said first electrode plate close to the at least one diode chip on said first electrode plate;
and
a third extension terminal, extending in a direction substantially at a right angle to said metal substrate, and disposed on said second electrode plate.

8 more elements

A semiconductor module comprising:

a metal substrate;
a module formed on said metal substrate including a plurality of switching device chips each having a pair of main surfaces and a pair of main electrodes, one of said main electrodes being provided on one main surface and the other of said main electrodes and a control electrode being provided on the other main surface, said switching device chips each being disposed on the metal substrate with the one main surface facing to the metal substrate, at least one diode chip having a pair of main surfaces and a pair of main electrodes, one of the main electrodes being provided on one main surface and the other of the main electrodes being provided on the other main surface, said at least one diode chip being disposed on the metal substrate, an electrode plate disposed on the metal substrate through an insulation plate, a plurality of connection conductive portions for connecting the other main electrodes of the switching device chips and the at least one diode chip with the electrode plate, a first lead terminal for connecting the one main electrodes of the switching device chips with the one main electrode of the at least one diode chip, and a second lead terminal provided at a position close to the at least one diode chip of the electrode plate;
and
a resin case for covering the module,
wherein the first and second lead terminals extend through the resin case to the outside of the resin case.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application: 08/979,778Filed 26 Nov 1997 · division
Priority: JP 1-33133422 Dec 1989
Granted: 27 Jul 1999
Term ends: Not estimatedThe source records don’t support an estimate.

Classification16 codes

H02M 7/487
Converters with outputs that each can have more than two voltages levels: neutral point clamped inverters
H02M 7/003
Conversion of AC power input into DC power output; Conversion of DC power input into AC power output: constructional details, e.g. physical…
H03K 17/08148
By measures taken in the output circuit: in composite switches
H10W 76/12
Containers or parts thereof: characterised by their shape

Family

Serial631,289Parent of this continuation-in-part · filed 20 Dec 1990
Serial660,872Parent of this continuation · filed 26 Feb 1991
Serial833,706Parent of this continuation · filed 11 Feb 1992
Serial947,544Parent of this continuation-in-part · filed 21 Sep 1992
Serial971,567Parent of this continuation-in-part · filed 5 Nov 1992
Serial473,937Parent of this division · filed 7 Jun 1995
US 5,731,970 AParent of this division
US 5,459,655 AParent of this continuation-in-part
US 5,274,541 AParent of this continuation-in-part
US 5,278,443 AParent of this continuation-in-part
US 5,166,760 AParent of this continuation
US 5,101,244 AParent of this continuation
US 5,929,519 AThis patent

From the US filing history. Foreign family members aren’t listed.