Method and apparatus for treating exhaust gases from CVD, PECVD or plasma etch reactors
AssigneeNovellus Systems, Inc.
InventorKenneth Allen Aitchison
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Abstract
A method and apparatus for removing gas species which can be deposited thermally from a semiconductor process exhaust gas is provided. To treat the exhaust gas, an exhaust gas reactor comprising an artificial substrate which is heated is used. The artificial substrate is a structure upon which high temperature chemical vapor deposition (HTCVD) reaction product is deposited. In particular, the HTCVD reaction product is deposited by contacting the exhaust gas with the heated artificial substrate.
Claims51
An exhaust gas reactor comprising:
- an outer housing having an inlet port and an outlet port;
- an artificial substrate located within said outer housing said artificial substrate comprising:
- a first tube;
- a second tube;
- and
- a plurality of plates radiating from said first tube to said second tube;
- and
- means for heating said artificial substrate.
A method of removing active gas species from a semiconductor process exhaust gas comprising:
- heating an artificial substrate;
- and
- contacting said exhaust gas with said artificial substrate, wherein said exhaust gas is at a pressure greater than or equal to atmospheric pressure.
A method of removing active gas species from a semiconductor process exhaust gas comprising:
- heating an artificial substrate, wherein said artificial substrate comprises a plurality of plates radiating from a central tube, said heating further comprising heating said central tube;
- and
- contacting said exhaust gas with said artificial substrate.
Dependencies are inferred from the claim text.