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US 5,924,012 AGranted
Methods, complexes, and system for forming metal-containing films
AssigneeMicron Technology, Inc.
InventorBrian A. Vaartstra
Life of this patent
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Abstract
A method of forming a film on a substrate using Group III metal complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
Claims31
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a precursor comprising one or more complexes of the formula:
- M{(C(R.sup.1).sub.2).sub.n !N(R.sup.2).sub.2 }(R.sup.3)(R.sup.4)
- wherein:
- M is a Group III metal;
- each R.sup.1, R.sup.2, R.sup.3, and R.sup.4 group is independently H or a (C.sub.1 -C.sub.30)hydrocarbon group wherein optionally R.sup.3 and R.sup.4 are joined to form a ring or rings with the metal and none of the other R groups are joined together to form ring systems;
- and
- n=1 to 6;
- and
- forming a metal-containing film from said precursor on a surface of the semiconductor substrate or substrate assembly;
- wherein the metal-containing film is a Group III metal film or a Group III metal alloy film.
8 more elements
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a precursor comprising one or more hydride complexes of the formula:
- M{(C(R.sup.1).sub.2).sub.n !N(R.sup.2).sub.2 }(R.sup.3)(R.sup.4)
- wherein:
- M is a Group III metal;
- each R.sup.1, R2, R.sup.3, and R.sup.4 group is independently H or a (C.sub.1 -C.sub.30) hydrocarbon group, with the proviso that at least one of R.sup.3 and R.sup.4 is H and none of the R groups are joined together to form ring systems;
- and
- n-1 to 6;
- and
- forming a metal-containing film from said precursor on a surface of the semiconductor substrate or substrate assembly.
7 more elements
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a liquid precursor comprising one or more hydride complexes of the formula:
- M{(C(R.sup.1).sub.2).sub.n !N(R.sup.2).sub.2 }(R.sup.3)(R.sup.4)
- wherein:
- M is a Group III metal;
- each R.sup.1,R.sup.2, R.sup.3, and R.sup.4 group is independently H or a (C.sub.1 -C.sub.30)hydrocarbon group, with the proviso that at least one of R.sup.3 and R.sup.4 is H;
- and n=1 to 6 and none of the R groups are joined together to form ring systems;
- and
- vaporizing said liquid precursor to form vaporized precursor;
- and directing the vaporized precursor toward the semiconductor substrate or substrate assembly to form a metal-containing film on a surface of the semiconductor substrate or substrate assembly.
7 more elements
A method of forming a film on a substrate, the method comprising:
- providing a substrate;
- providing a precursor comprising one or more complexes of the formula:
- M{(C(R.sup.1).sub.2).sub.n !N(R.sup.2).sub.2 }(R.sup.3)(R.sup.4)
- wherein:
- M is a Group III metal;
- each R.sup.1, R.sup.2, R.sup.3, and R.sup.4 group is independently H or a (C.sub.1 -C.sub.30)hydrocarbon group wherein optionally R.sup.3 and R.sup.4 are joined to form a ring or rings with the metal and none of the other R groups are joined together to form ring systems;
- and
- n=1 to 6;
- and
- forming a metal-containing film from said precursor on a surface of the substrate;
- wherein the metal-containing film is a Group III metal film or a Group III metal alloy film.
8 more elements
A method of forming a film on a substrate, the method comprising:
- providing a substrate;
- providing a precursor comprising one or more hydride complexes of the formula:
- M{(C(R.sup.1).sub.2).sub.n !N(R.sup.2).sub.2 }(R.sup.3)(R.sup.4)
- wherein:
- M is a Group III metal;
- each R.sup.1, R.sup.2, R.sup.3, and R.sup.4 group is independently H or a (C.sub.1 -C.sub.30) hydrocarbon group, with the proviso that at least one of R.sup.3 and R.sup.4 is H and none of the R groups are joined together to form ring systems;
- and
- n=1 to 6;
- and
- forming a metal-containing film from said precursor on a surface of the substrate.
7 more elements
A method of forming a film on a substrate, the method comprising:
- providing a substrate;
- providing a liquid precursor comprising one or more hydride complexes of the formula:
- M{(C(R.sup.1).sub.2).sub.n !N(R.sup.2).sub.2 }(R.sup.3)(R.sup.4)
- wherein:
- M is a Group III metal;
- each R.sup.1, R.sup.2, R.sup.3, and R.sup.4 group is independently H or a (C.sub.1 -C.sub.30) hydrocarbon group, with the proviso that at least one of R.sup.3 and R.sup.4 is H and none of the R groups are joined together to form ring systems;
- and
- n=1 to 6;
- and
- vaporizing said liquid precursor to form vaporized precursor;
- and directing the vaporized precursor toward the substrate to form a metal-containing film on a surface of the substrate.
8 more elements
Dependencies are inferred from the claim text.