Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials

Abstract

A doped, metal oxide dielectric material and electronic components made with this material are disclosed. The metal oxide is a Group III or Group VB metal oxide (e.g. Al.sub.2 O.sub.3, Y.sub.2 O.sub.3, Ta.sub.2 O.sub.5 or V.sub.2 O.sub.5) and the metal dopant is a Group IV material (Zr, Si, Ti, and Hf). The metal oxide contains about 0.1 weight percent to about 30 weight percent of the dopant. The doped, metal oxide dielectric of the present invention is used in a number of different electronic components and devices. For example, the doped, metal oxide dielectric is used as the gate dielectric for MOS devices. The doped, metal oxide dielectric is also used as the inter-poly dielectric material for flash memory devices.

Dependencies are inferred from the claim text.