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AssigneeMatsushita Battery Industrial Co., Ltd.
InventorsHiroshi Higuchi, Akira Hanafusa, Kuniyoshi Omura, Mikio Murozono, Hideaki Oyama
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A semiconductor layer for photoelectric transfer device for forming a p-n junction, which has large surface area and uniform film pressure, is formed in the atmosphere under normal pressure for several minutes. The semiconductor layer for forming a p-n junction is composed of a compound semiconductor of a Group II element(selected from the group consisting of Cd, Zn and Hg)-Group VI element(selected from the group consisting of S and Te). A semiconductor layer having a p or n conductive type is formed on a substrate by pyrolytically decomposing an organometallic compound containing a II-VI group atom bond. A semiconductor film is formed on the surface of a substrate by dispersing or dissolving an organometallic compound in a solvent to form a solution, applying ink on the surface of the substrate using a suitable printing method and subjecting to a heat treatment.
A method of preparing semiconductor layers under atmospheric pressure to constitute a p-n junction used for a photoelectric transfer device, wherein each of said semiconductor layers comprises a II-VI atom chemically bonding compound in which the Group 11 atom is selected from the group consisting of Cd, Zn, and Hg, and the Group VI atom is Te, which comprises coating a substrate with a liquid composition containing an organometallic compound represented by the formula:
A method of preparing semiconductor layers under atmospheric pressure to constitute a p-n junction used for a photoelectric transfer device, wherein each of said semiconductor layers comprises a II-VI atom chemically bonding compound in which the Group 11 atom is selected from the group consisting of Cd, Zn, and Hg, and the Group VI atom is Te, which comprises heating to a high temperature the surface of a substrate and then contacting said heated surface with a gaseous composition under atmospheric pressure containing an organometallic compound represented by the formula:
A method of preparing semiconductor layers under atmospheric pressure to constitute a p-n junction used for a photoelectric transfer device, wherein each of said semiconductor layers comprises a II-VI atom chemically bonding compound in which the Group II atom is selected from the group consisting of Cd, Zn, and Hg, and the Group VI atom is Te, which comprises heating to a high temperature the surface of a substrate and then contacting said heated surface with a powder type or liquid type composition to be sprayed, said composition containing an organometallic compound represented by the formula:
A method of preparing semiconductor layers to constitute a p-n junction used for a photoelectric transfer device, wherein each of said semiconductor layers comprises a II-VI atom chemically bonding compound in which the Group II atom is Cd and the Group VI atom is S, which comprises providing a substrate and then pyrolytically decomposing an organometallic compound having Cd-S bonding which is selected from the group consisting of mercapatide, thiosulfate, dithiosulfate, thiocarboxylate, dithiocarboxylate, thiocarbamate, and dithiocarbamate of cadmium.
Dependencies are inferred from the claim text.