Methods of forming active matrix display devices with reduced susceptibility to image-sticking and devices formed thereby

A thin-film transistor display device, comprising:

• a gate electrode on a face of a substrate;
• a first electrically insulating layer having a first thickness, on the gate electrode;
• a first amorphous silicon layer having a second thickness, on the first electrically insulating layer, opposite the gate electrode;
• a channel protection layer having a third thickness greater than the sum of the first thickness and second thickness, on the first amorphous silicon layer;
• a pixel electrode electrically coupled to a first end of the first amorphous silicon layer;
• and
• a data line electrically coupled to a second end of the first amorphous silicon layer.

A method of forming display device, comprising the steps of:

• forming a first conductive layer on a face of a substrate;
• etching the first conductive layer to define a gate electrode and a common electrode;
• forming a first insulating layer on the gate electrode, on the common electrode and on the face;
• forming a first amorphous semiconductor layer on the first insulating layer, opposite the gate electrode;
• forming a channel protection layer on the first amorphous semiconductor layer, opposite the gate electrode;
• forming a second amorphous semiconductor layer on the channel protection layer;
• forming a second conductive layer on the second amorphous semiconductor layer;
• and
• etching the second conductive layer, the second amorphous semiconductor layer, the first amorphous semiconductor layer and the first insulating layer to define a source electrode, a drain electrode and a pixel electrode;
• wherein a thickness of the channel protection layer is greater than a sum of the thicknesses of the first insulating layer and the first amorphous semiconductor layer.