Phonon resonator and method for its production
AssigneeB.A. Painter, III
InventorThomas G. Brown
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Abstract
A structure of periodically varying density is provided, that acts as a phonon resonator for phonons capable of participating in phonon-electron interactions. Specifically, a phonon resonator that is resonant for phonons of appropriate momentum to participate in indirect radiative transitions and/or inter zone intervalley scattering events is provided. Preferably, the structure is an isotope superlattice, most preferably of silicon. The structure of the present invention has improved optical, electrical, and/or heat transfer properties. A method of preparing a the structure of the present invention is also provided.
Claims33
A silicon structure of substantially periodically varying density comprising:
- at least one first layer that is substantially enriched for a first silicon isotope and has a first density;
- and
- at least one second layer that is substantially enriched for a second silicon isotope and has a second density, said first and second layers being adjacent one another and alternating in said structure so that said structure has a substantially periodically varying density in one dimension, the period of said structure being selected such that said structure is substantially resonant for phonons of appropriate wavevector to participate in electron-phonon interactions that change the interacting electron's momentum.
A structure of substantially periodically varying density comprising:
- at least one first layer having a first density by virtue of being enriched for a first isotope of a first element;
- and
- at least one second layer having a second density by virtue of being enriched for a second isotope of a second element, said first and second regions being adjacent one another and alternating in said structure so that said structure has a substantially periodically varying density in one dimension the period of said structure being selected such that said structure is substantially resonant for phonons of appropriate wavevector to participate in radiative electronic transitions.
A structure of substantially periodically varying density comprising:
- at least one first region having a first density by virtue of being enriched for a first isotope of a first element;
- and
- at least one second region having a second density by virtue of being enriched for a second isotope of a second element, said first and second regions being adjacent one another and alternating in said structure so that said structure has a substantially periodically varying density, the period of said structure being selected such that said structure is substantially resonant for phonons generated by stimulated emission.
A silicon structure having:
- degenerate conduction band valleys;
- and
- substantially periodic variations in material composition, said substantially periodic variations comprising alternations of a first layer substantially enriched for a first silicon isotope and a second layer substantially enriched for a second silicon isotope so that said material composition varies in one dimension, the periodicity of the layers being selected so that scattering of electrons between said degenerate conduction band valleys is enhanced relative to intervalley electron scattering in a structure lacking said substantially periodic variations.
Dependencies are inferred from the claim text.