Charged-particle-beam exposure apparatus and methods with substrate-temperature control

A charged-particle-beam exposure apparatus, comprising:

• (a) an exposure-processing chamber in which exposure of a sensitive substrates is performed using a charged-particle beam under preset vacuum and exposure-temperature conditions;
• (b) a load-lock chamber in which pressure is variable between atmospheric and subatmospheric;
• (c) a loader chamber in which temperature is controlled;
• (d) a first gate valve connecting the load-lock chamber to the loader chamber;
• (e) a second gate valve connecting the loader chamber to the exposure-processing chamber;
• (f) transport means for transporting the sensitive substrate between an external environment and the load-lock chamber, for transporting the sensitive substrate from the load-lock chamber and the loader chamber, and for transporting the sensitive substrates from the loader chamber to the exposure-processing chamber;
• and
• (g) temperature-adjusting means for controllably adjusting the temperature of the sensitive substrate prior to exposure processing of the sensitive substrate in the exposure-processing chamber, wherein the sensitive substrate is transported from the external environment to the exposure-processing chamber by a sequence comprising transport of the sensitive substrate into the load-lock chamber under atmospheric conditions, evacuation of the load-lock chamber to a vacuum condition, transport of the sensitive substrate from the load-lock chamber through the first gate valve into the loader chamber, and transport of the sensitive substrate from the loader chamber through the second gate valve into the exposure-processing chamber, said temperature-adjusting means adjusting the temperature of the sensitive substrate such that, when the sensitive substrate is transported into the exposure-processing chamber, the sensitive substrate is at the exposure temperature.

A method for increasing the throughput of a charged-particle-beam exposure apparatus, wherein exposure of a sensitive substrate by a charged-particle beam occurs in an exposure-processing chamber under preset vacuum and temperature conditions, the method comprising the steps:

• (a) transporting a sensitive substrate into a load-lock chamber under atmospheric conditions;
• (b) evacuating the load-lock chamber to a preset vacuum level to match a vacuum level in the exposure-processing chamber;
• (c) transporting the sensitive substrate from the evacuated load-lock chamber into the exposure-processing chamber;
• and
• (d) adjusting the temperature of the sensitive substrate so as to compensate for any temperature loss to the sensitive substrate during steps (a)-(c) so that the temperature of the sensitive substrate upon entering the exposure-processing chamber matches an interior temperature of the exposure-processing chamber.

A method for increasing the throughput of a charged-particle-beam exposure apparatus, wherein exposure of a sensitive substrate by a charged-particle beam occurs in an exposure-processing chamber under preset vacuum and temperature conditions, the method comprising the steps:

• (a) transporting a sensitive substrate into a load-lock chamber under atmospheric conditions;
• (b) evacuating the load-lock chamber to a preset vacuum level to match a vacuum level in the exposure-processing chamber;
• (c) transporting the sensitive substrate from the load-lock chamber into a loader chamber;
• (d) transporting the sensitive substrate from the loader chamber into the exposure-processing chamber;
• and
• (e) adjusting the temperature of the sensitive substrate so as to compensate for any temperature loss to the sensitive substrate during steps (a)-(d) so that the temperature of the sensitive substrate upon entering the exposure-processing chamber matches an interior temperature of the exposure-processing chamber.