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US 5,913,147 AGranted
Method for fabricating copper-aluminum metallization
AssigneeAdvanced Micro Devices, Inc.
InventorsValery Dubin, Chiu Ting
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Abstract
A method for fabricating copper-aluminum metallization utilizing the technique of electroless copper deposition is described. The method provides a self-encapsulated copper-aluminum metallization structure.
Claims13
A method for fabricating copper alloy metallization in a recess defined in a dielectric layer of a substrate, the method comprising the steps of:
- depositing a diffusion barrier layer on the surfaces of the recess;
- depositing a copper alloy layer on the diffusion barrier layer;
- and
- annealing the copper alloy layer to form a first thin oxide layer on an exposed surface of the copper alloy layer, and a second thin oxide layer at the interface between the copper alloy layer and the diffusion barrier layer.
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A method for fabricating copper alloy metallization in a recess defined in a dielectric layer of a substrate, the method comprising the steps of:
- depositing a U-shaped diffusion barrier layer on the surfaces of the recess;
- depositing a copper alloy layer on the U-shaped diffusion barrier layer;
- and
- annealing the copper alloy layer to form a first thin oxide layer on an exposed surface of the copper alloy layer, and a second thin oxide layer at the interface between the copper alloy layer and the U-shaped diffusion barrier layer.
1 more element
Dependencies are inferred from the claim text.