Epitaxial oxides on amorphous SiO.sub.2 on single crystal silicon
AssigneeThe Regents of the University of California
InventorQuanxi Jia
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Abstract
A process for forming a structure including an epitaxial layer of a oxide material such as yttria-stabilized zirconia on a thick layer of amorphous silicon dioxide having a thickness of at least about 500 Angstroms on a single crystal silicon substrate and the resultant structures derived therefrom are provided.
Claims17
A structure comprising:
- a single crystal silicon substrate;
- an amorphous layer of silicon dioxide adjacent said single crystal silicon substrate, said amorphous layer having a thickness of at least about 500 Angstroms;
- and,
- a layer of epitaxial oxide material adjacent said amorphous layer of silicon dioxide, said layer of epitaxial oxide material about 50 nm in thickness.
A process of forming a structure including a single crystal silicon substrate, an amorphous layer of silicon dioxide adjacent said single crystal silicon substrate, and, a layer of epitaxial oxide material adjacent said amorphous layer of silicon dioxide, said process comprising:
- depositing a layer of epitaxial oxide material selected from the group cositing of yttria-stabilized zirconia, ceium oxide, yttyium Loxide, magfenim-oxide and magnesium aluminum oxide on a single crystal silicon substrate to form an intermediate structure;
- and,
- heating said intermediate structure in an oxygen-containing atmosphere at temperatures from about 900.degree. C. to about 1200.degree. C. whereby a layer of amorphous silicon dioxide of at least about 500 Angstroms is formed in situ between said single crystal silicon substrate and said layer of epitaxial oxide material.
Dependencies are inferred from the claim text.