Method of removing etching residue

A method of removing etching residue, residual photoresist, and photoresist byproducts from a substrate, the method comprising:

• contacting a substrate having resist or etching residue present thereon with a composition comprising:
• (a) from about 5 to about 50 percent by weight of at least one nucleophilic amine compound having oxidation and reduction potentials selected from the group consisting of
• compounds of formula I and salts thereof, ##STR13## wherein R.sub.1, R.sub.2, and R.sub.3 are independently hydrogen;
• a hydroxyl group;
• a substituted C.sub.1 -C.sub.6 straight, branched or cyclo alkyl, alkenyl, or alkynyl group, a substituted acyl group, straight or branched alkoxy group, amidyl group, carboxyl group, alkoxyalkyl group, alkylamino group, alkylsulfonyl group, or sulfonic acid group, or salts or derivatives thereof, wherein at least one of R.sub.1, R.sub.2, and R.sub.3 is selected from the group consisting of a hydroxyl group;
• substituted C.sub.1 -C.sub.6 straight, branched, and cyclo alkyl, alkenyl, and alkynyl groups, substituted acyl groups, straight and branched alkoxy groups, amidyl groups, carboxyl groups, alkoxyalkyl groups, alkylamino groups, alkylsulfonyl groups, sulfonic acid groups, and salts and derivatives thereof;
• and
• compounds of formula II and salts thereof, ##STR14## wherein R.sub.7, R.sub.8, R.sub.9, and R.sub.10 are independently hydrogen;
• a hydroxyl group;
• a substituted C.sub.1 -C.sub.6 straight, branched or cyclo alkyl, alkenyl, or alkynyl group;
• a substituted acyl group, straight or branched alkoxy group, amidyl group, carboxyl group, alkoxyalkyl group, alkylamino group, alkylsulfonyl group, or sulfonic acid group, wherein at least one of R.sub.7, R.sub.8, R.sub.9, and R.sub.10 is selected from the group consisting of a hydroxyl group;
• substituted C.sub.1 -C.sub.6 straight, branched, and cyclo alkyl alkenyl, and alkynyl group;
• substituted acyl groups, straight and branched alkoxy groups, amidyl groups, carboxyl groups, alkoxyalkyl groups, alkylamino groups, alkylsulfonyl groups, sulfonic acid groups, and salts and derivatives thereof;
• (b) from about 10 to about 80 percent by weight of at least one alkanolamine, which is miscible with the at least one nucleophilic amine compound;
• and
• (c) a balance of water, at a temperature and for a time sufficient to remove resist or etching residue from the substrate.

A method of removing etching residue, residual photoresist, and photoresist byproducts from a substrate, the method comprising:

• contacting a substrate having resist or etching residue present thereon with a composition comprising:
• (a) from about 5 to about 50 percent by weight of at least one nucleophilic amine compound having oxidation and reduction potentials selected from the group consisting of
• compounds of formula I and salts thereof, ##STR15## wherein R.sub.1, R.sub.2, and R.sub.3 are independently hydrogen;
• a hydroxyl group;
• a substituted C.sub.1 -C.sub.6 straight, branched or cyclo alkyl, alkenyl, or alkynyl group, a substituted acyl group, straight or branched alkoxy group, amidyl group, carboxyl group, alkoxyalkyl group, alkylamino group, alkylsulfonyl group, or sulfonic acid group, or salts or derivatives thereof, wherein at least one of R.sub.1, R.sub.2, and R.sub.3 is selected from the group consisting of a hydroxyl group:
• substituted C.sub.1 -C.sub.6 straight, branched, and cyclo alkyl, alkenyl, and alkynyl group;
• substituted acyl groups, straight and branched alkoxy groups, amidyl groups, carboxyl groups, alkoxyalkyl groups, alkylamino groups, alkylsulfonyl groups, sulfonic acid groups, and salts and derivatives thereof;
• compounds of formula II and salts thereof, ##STR16## wherein R.sub.7, R.sub.8, R.sub.9, and R.sub.10 are independently hydrogen;
• a hydroxyl group;
• a substituted C.sub.1 -C.sub.6 straight, branched or cyclo alkyl, alkenyl, or alkynyl group;
• a substituted acyl group, straight or branched alkoxy group, amidyl group, carboxyl group, alkoxyalkyl group, alkylamino group, alkylsulfonyl group, or sulfonic acid group, wherein at least one of R.sub.7, R.sub.8, R.sub.9, and R.sub.10 is selected from the group consisting of a hydroxyl group;
• substituted C.sub.1 -C.sub.6 straight, branched, and cyclo alkyl, alkenyl, and alkynyl group;
• substituted acyl groups, straight and branched alkoxy groups, amidyl groups, carboxyl groups alkoxyalkyl groups, alklamino groups, alkylsulfonyl groups, sulfonic acid groups, and salts and derivatives thereof;
• (b) from about 10-80 percent by weight of at least one organic solvent which is miscible with the at least one nucleophilic amine compound;
• (c) an effective amount of up to about 30 percent by weight of at least one compound selected from the group consisting of a compound of formula III, ##STR17## wherein R.sub.15, and R.sub.16 can be either H, t-butyl, OH, or COOH, a compound of formula IV, ##STR18## where R.sub.17 is OH or COOH, and an ethylene diamine tetracarboxylic acid of formula V, ##STR19## where R.sub.18, R.sub.19, R.sub.20 and R.sub.21 can be either H or NH.sub.4, and an ammonium salt thereof;
• and
• (d) a balance of water, at a temperature and for a time sufficient to remove resist or etching residue from the substrate, and wherein the nucleophilic amine compound is different from the organic solvent.

A method of removing etching residue, residual photoresist, and photoresist byproducts from a substrate, the method comprising:

• contacting a substrate having resist or etching residue present thereon with a composition comprising:
• (a) from about 5 to about 50 percent by weight of at least one nucleophilic amine compound having oxidation and reduction potentials selected from the group consisting of
• compounds of formula I and salts thereof, ##STR20## wherein R.sub.1, R.sub.2, and R.sub.3 are independently hydrogen;
• a hydroxyl group;
• a substituted C.sub.1 -C.sub.6 straight, branched or cyclo alkyl, alkenyl, or alkynyl group, a substituted acyl group, straight or branched alkoxy group, amidyl group, carboxyl group, alkoxyalkyl group, alkylamino group, alkylsulfonyl group, or sulfonic acid group, or salts or derivatives thereof, wherein at least one of R.sub.1, R.sub.2, and R.sub.3 is selected from the group consisting of a hydroxyl group;
• substituted C.sub.1 -C.sub.6 straight, branched, and cyclo alkyl, alkenyl, and alkynyl groups, substituted acyl groups, straight and branched alkoxy groups, amidyl groups, carboxyl groups, alkoxyalkyl groups, alkylamino groups, alkylsulfonyl groups, sulfonic acid groups, and salts and derivatives thereof;
• and
• compounds of formula II and salts thereof, ##STR21## wherein R.sub.7, R.sub.8, R.sub.9, and R.sub.10 are independently hydrogen;
• a hydroxyl group;
• a substituted C.sub.1 -C.sub.6 straight, branched or cyclo alkyl, alkenyl, or alkynyl group;
• a substituted acyl group, straight or branched alkoxy group, amidyl group, carboxyl group, alkoxyalkyl group, alkylamino group, alkylsulfonyl group, or sulfonic acid group, wherein at least one of R.sub.7, R.sub.8, R.sub.9, and R.sub.10 is selected from the group consisting of a hydroxyl group;
• substituted C.sub.1 -C.sub.6 straight, branched, and cyclo alkyl, alkenyl, and alkynyl group;
• substituted acyl groups, straight and branched alkoxy groups, amidyl groups, carboxyl groups, alkoxyalkyl groups, alkylamino groups, alkylsulfonyl groups, sulfonic acid groups, and salts and derivatives thereof;
• (b) from about 10-80 percent by weight of at least one organic solvent which is miscible with the at least one nucleophilic amine compound;
• and
• (c) a balance of water, at a temperature and for a time sufficient to remove resist or etching residue from the substrate, and wherein the nucleophilic amine compound is different from the organic solvent.