Refresh sampling built-in self test and repair circuit
AssigneeLSI Logic Corporation
InventorWilliam Schwarz
Life of this patent
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AssigneeLSI Logic Corporation
InventorWilliam Schwarz
Estimating the term…
A method for testing a memory device which statistically characterizes the failure time for a subset of cells sampled from the memory array before performing testing of the memory array in general. The memory device includes a testing unit which determines the failure times for cells in the sample subset, and a parameter calculation unit which computes one or more statistical parameters from the failure times. These statistical parameters are then used to determine a refresh pause time which is used in a data retention test of the memory array. The testing method may be performed when power is applied to the memory device. Thus, the BIST method may provide for the accurate detection of memory faults in the memory array at any power-up temperature. In addition, the testing method may be performed after the memory array attains an operational temperature, or in response to an operating system command.
A method for on-chip testing of a memory device that contains a memory array, the method comprising:
A system for detecting data retention faults, wherein the system comprises:
A memory device comprising:
Dependencies are inferred from the claim text.