Surface acoustic wave device with multilayer electrodes and method for manufacturing the same
AssigneeFujitsu Limited
InventorsTokihiro Nishihara, Hidema Uchishiba, Osamu Ikata, Yoshio Satoh
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Abstract
A surface acoustic wave device includes an electrode formed by a first film and a second film on a substrate, the first film including an Al film or a film formed by adding at least one other element to Al, and the second film including a metal whose coefficient of diffusion into Al is greater than a self diffusion coefficient of Al. The present invention contributes to improvement of the high-power durability of the electrodes.
Claims13
A surface acoustic wave device comprising an electrode formed by a first film and a second film on a substrate, the first film comprising an Al film or a film formed by adding A1 and at least one other, and the second film consisting of a metal other than Al and lighter than Cu whose coefficient of diffusion into Al is greater than a self diffusion coefficient of Al.
A method of manufacturing a surface acoustic wave device, comprising the step of forming an electrode including the step of laminating a first film and a second film on a substrate and the step of patterning the laminated films into a desired shape, the first film comprising an Al film or a film formed by adding Al and at least one other element, the second film consisting of a metal other than Al and lighter than Cu whose coefficient of diffusion into Al is greater than a self diffusion coefficient of Al, wherein all the steps are performed at temperatures below 200.degree. C.
Dependencies are inferred from the claim text.