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US 5,906,951 AGranted
Strained Si/SiGe layers on insulator
AssigneeInternational Business Machines Corporation
InventorsJack Oon Chu, Khalid EzzEldin Ismail
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Abstract
An SOI substrate and method for forming is described incorporating the steps of forming strained layers of Si and/or SiGe on a first substrate, forming a layer of Si and/or S.sub.i O.sub.2 over the strained layers, bonding a second substrate having an insulating layer on its upper surface to the top surface above the strained layers, and removing the first substrate. The invention overcomes the problem of forming strained Si and SiGe layers on insulating substrates.
Claims7
A method for forming strained layers on an insulator comprising the steps of:
- selecting a first semiconductor substrate,
- forming a first epitaxial graded layer of Si.sub.1-y Ge.sub.y over said first semiconductor substrate where Y at its upper surface is in the range from 0.2 to 0.5,
- forming a second relaxed layer of SiGe,
- forming a third p++ doped layer of SiGe,
- forming a fourth epitaxial strained layer selected from the group consisting of Si and SiGe,
- forming a fifth relaxed Si.sub.1-X Ge.sub.X layer where X is in the range from 0.2 to 0.5,
- forming a sixth layer of Si,
- selecting a second substrate having an upper layer selected from the group consisting of Si and SiO.sub.2 thereon,
- bonding the upper surface of said sixth layer and said second substrate together,
- removing said first substrate and said first and second layers.
7 more elements
Dependencies are inferred from the claim text.