Method for testing semiconductor element
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsAkira Inoue, Yasuharu Nakajima, Yukio Ohta, Hiroto Matsubayashi
Life of this patent
Estimating the term…
Abstract
An apparatus of testing a semiconductor element applies pulsed voltages synchronized with each other, respectively, to a gate and a drain of a semiconductor element being tested and measures current flowing through the semiconductor element in response to the pulsed voltages thus applied. The testing apparatus produces pulsed I-V characteristics considering the influences of self heating and surface energy levels of the semiconductor element and RF swing along a load line during large signal operation.
Claims12
A method of testing a semiconductor element including:
- applying pulsed voltages synchronized with each other to a gate and to a drain, respectively, of a semiconductor element;
- measuring a current flowing through the semiconductor element in response to the pulsed voltages;
- and
- detecting a variation of a drain current flowing through the drain in response to a varying voltage applied to the gate of the semiconductor element, thereby measuring transconductance gm along a load line.
A method of testing a semiconductor element including:
- applying pulsed voltages synchronized with each other to a gate and to a drain, respectively, of a semiconductor element;
- measuring a current flowing through the semiconductor element in response to the pulsed voltages;
- and
- detecting a variation of a drain current flowing through the drain in response to a varying voltage applied to the gate of the semiconductor element, thereby measuring frequency dispersion of transconductance gm along a load line.
A method of testing a semiconductor element including:
- applying pulsed voltages synchronized with each other to a gate and to a drain, respectively, of a semiconductor element;
- measuring a current flowing through the semiconductor element in response to the pulsed voltages;
- and
- detecting a variation of a drain current flowing through the drain in response to a varying voltage applied to the drain of the semiconductor element, thereby measuring drain conductance gd along a load line.
A method of testing a semiconductor element including:
- applying pulsed voltages synchronized with each other to a gate and to a drain, respectively, of a semiconductor element;
- measuring a current flowing through the semiconductor element in response to the pulsed voltages;
- and
- detecting a variation of a drain current flowing through the drain in response to a varying voltage applied to the drain of the semiconductor element, thereby measuring frequency dispersion of drain conductance gd along a load line.
A method of testing a semiconductor element including:
- preparing a semiconductor element having a source, a gate, and a drain by connecting a load to the drain;
- applying pulsed voltages synchronized with each other to the gate and to the drain, respectively, of the semiconductor element;
- measuring a current flowing through the semiconductor element in response to the pulsed voltages;
- and
- applying pulsed voltages having positive pulses and negative pulses that are alternately repeated at regular intervals.
A method of testing a semiconductor element including:
- preparing a semiconductor element having a source, a gate, and drain by connecting a load to the drain;
- applying pulsed voltages synchronized with each other to the gate and to the drain, respectively, of the semiconductor element;
- measuring a current flowing through the semiconductor element in response to the pulsed voltages;
- and
- applying pulsed voltages having positive pulses and negative pulses that are alternatingly repeated.
A method of testing a semiconductor element including:
- preparing a semiconductor element having a source, a gate, and a drain by connecting a load to the drain;
- applying pulsed voltages synchronized with each other to the gate and to the drain, respectively, of the semiconductor element;
- measuring a current flowing through the semiconductor element in response to the pulsed voltages;
- and
- applying a pulse for discharging an electronic charge immediately before applying the pulsed voltages for measurement.
A method of testing a semiconductor element including:
- preparing a semiconductor element having a source, a gate, and a drain by connecting a load to the drain;
- applying pulsed voltages synchronized with each other to the gate and to the drain, respectively, of the semiconductor element;
- measuring a current flowing through the semiconductor element in response to the pulsed voltages;
- and
- applying pulsed voltages having positive pulses and negative pulses produced immediately after respective positive pulses n (n.gtoreq.1) times, the pulses being repeated at regular intervals.
Dependencies are inferred from the claim text.