Semiconductor integrated circuit

A semiconductor integrated circuit comprising a plurality of basic circuits for transmitting high frequency signals, wherein each of said plurality of basic circuits comprises:

• a field-effect transistor having a gate, a source, and a drain, said field-effect transistor being formed on a substrate;
• first and second signal terminals for externally transmitting said high frequency signals to and from said field-effect transistor;
• DC component intercepting members coupled between said source and drain of said field-effect transistor and said first and second signal terminals, respectively, each of said DC component intercepting members containing at least a capacitor component having an impedance lower than a line impedance in a frequency band to be used;
• a first control terminal connected to said gate and formed on said substrate;
• a first preventing member coupled between said gate and said first control terminal, having resistance characteristics of an impedance higher than the line impedance;
• a second control terminal connected via a branched line to a line between one of said DC component intercepting members and at least one of said source and drain of said field-effect transistor;
• and
• a second preventing member formed on said substrate and arranged at said branched line, said second preventing member comprising a resistor having an impedance higher than the line impedance;
• wherein a quantity of said high frequency signals transmitted between said first and second signal terminals in said basic circuit under the control of control voltage signals applied to said first and second control terminals,
• said semiconductor integrated circuit further comprising:
• an input terminal connected commonly to said first signal terminal of each of said plurality of basic circuits,
• an output terminal connected to said second signal terminal of a first one of said plurality of basic circuits,
• a second voltage supply terminal connected to said second signal terminal of a second one of said plurality of basic circuits,
• a third control terminal connected commonly to said first control terminal of said first one of said plurality of said basic circuits and to said second control terminal of said second one of said plurality of basic circuits for inputting a control voltage signal,
• a first voltage supply terminal connected to said second control terminal of said first one of said plurality of basic circuits, and
• said second voltage supply terminal connected to said first control terminal of said second one of said plurality of basic circuits,
• wherein each of said plurality of basic circuits is operative as a switch.

A semiconductor integrated circuit comprising a plurality of basic circuits for transmitting high frequency signals, wherein each of said plurality of basic circuits comprises:

• a field-effect transistor having a gate, a source, and a drain, said field-effect transistor being formed on a substrate;
• first and second signal terminals for externally transmitting said high frequency signals to and from said field-effect transistor;
• DC component intercepting members coupled between said source and drain of said field-effect transistor and said first and second signal terminals, respectively, each of said DC component intercepting members containing at least a capacitor component having an impedance lower than a line impedance in a frequency band to be used;
• a first control terminal connected to said gate and formed on said substrate;
• a first preventing member coupled between said gate and said first control terminal, having resistance characteristics of an impedance higher than the line impedance;
• a second control terminal connected via a branched line to a line between one of said DC component intercepting members and at least one of said source and drain of said field-effect transistor;
• and
• a second preventing member formed on said substrate and arranged at said branched line, said second preventing member comprising a resistor having an impedance higher than the line impedance;
• wherein a quantity of said high frequency signals transmitted between said first and second signal terminals in said basic circuit under the control of control voltage signals applied to said first and second control terminals,
• said semiconductor integrated circuit further comprising:
• an output terminal connected to said second signal terminal of a first one of said plurality of basic circuits,
• a second voltage supply terminal connected to said second signal terminal of a second one of said plurality of basic circuits,
• a third control terminal connected commonly to said first control terminal of said first one of said plurality of basic circuits and to said second control terminal of said second one of said plurality of basic circuits for inputting a control voltage signal,
• two resistors of the same resistance interposed between said source and drain, respectively, of said first one of said plurality of basic circuits, said two resistors are commonly coupled to said first signal terminal of said second one of said plurality of basic circuits,
• a first voltage supply terminal connected to said second control terminal of said first one of said plurality of basic circuits, and
• said second voltage supply terminal connected to said first control terminal of said second one of said plurality of basic circuits,
• wherein each of said basic circuits is operative as an attenuator.

A semiconductor integrated circuit comprising a first basic circuit and a second basic circuit, each of said basic circuits operative for transmitting high frequency signals, each of said basic circuits comprising:

• a field-effect transistor having a gate, a source, and a drain, said field-effect transistor being formed on a substrate;
• first and second signal terminals for externally transmitting said high frequency signals to and from said field-effect transistor;
• DC component intercepting members coupled between said source and drain of said field-effect transistor and said first and second signal terminals, respectively, each of said DC component intercepting members containing at least a capacitor component having an impedance lower than a line impedance in a frequency band to be used;
• a first control terminal connected to said gate and formed on said substrate;
• a first preventing member coupled between said gate and said first control terminal, having resistance characteristics of an impedance higher than the line impedance;
• a second control terminal connected via a branched line to a line between one of said DC component intercepting members and at least one of said source and drain of said field-effect transistor;
• and
• a second preventing member formed on said substrate and arranged at said branched line, said second preventing member comprising a resistor having an impedance higher than the line impedance;
• wherein a quantity of said high frequency signals transmitted between said first and second signal terminals in said basic circuit under the control of control voltage signals applied to said first and second control terminals,
• said integrated circuit device further comprising:
• a common input terminal connected to said first signal terminal of each of said basic circuits,
• a first output terminal connected to the second signal terminal of said first basic circuit,
• a second output terminal connected to the second signal terminal of said second basic circuit,
• a third control terminal commonly connected to said first control terminal of said first basic circuit and to said second control terminal of said second basic circuit for supplying a control voltage signal,
• a first voltage supply terminal connected to said second control terminal of said first basic circuit, and
• a second voltage supply terminal connected to said first control terminal of said second basic circuit,
• wherein said first basic circuit and said second basic circuit form a first unit circuit having a signal distributing function for outputting said high frequency signals inputted through said common input terminal through the first and second output terminals.

A semiconductor integrated circuit comprising a plurality of basic circuits for transmitting high frequency signals, wherein each of said plurality of basic circuits comprises:

• a field-effect transistor having a gate, a source, and a drain, said field-effect transistor being formed on a substrate;
• first and second signal terminals for externally transmitting said high frequency signals to and from said field-effect transistor;
• DC component intercepting members coupled between said source and drain of said field-effect transistor and said first and second signal terminals, respectively, each of said DC component intercepting members containing at least a capacitor component having an impedance lower than a line impedance in a frequency band to be used;
• a first control terminal connected to said gate and formed on said substrate;
• a first preventing member coupled between said gate and said first control terminal, having resistance characteristics of an impedance higher than the line impedance;
• a second control terminal connected via a branched line to a line between one of said DC component intercepting members and at least one of said source and drain of said field-effect transistor;
• and
• a second preventing member formed on said substrate and arranged at said branched line, said second preventing member comprising a resistor having an impedance higher than the line impedance;
• wherein a quantity of said high frequency signals transmitted between said first and second signal terminals in said basic circuit under the control of control voltage signals applied to said first and second control terminals,
• a integrated circuit device further comprising:
• a first input terminal connected to the first signal terminal of a first one of said plurality of basic circuits,
• a second input terminal connected to the first signal terminal of a second one of said plurality of basic circuits,
• an output terminal connected commonly to the second signal terminals of said first one of said plurality of basic circuits and said second one of said plurality of basic circuits,
• a third control terminal commonly connected to said first control terminal of first one of said plurality of basic circuits and to said second control terminal of said second one of said plurality of basic circuits for supplying said control voltage signal,
• a first voltage supply terminal connected to said second control terminal of said first one of said plurality of basic circuits, and
• a second voltage supply terminal connected to said first control terminal of said second one of said plurality of basic circuits,
• wherein said first one and said second one of said plurality of basic circuits forms a first unit circuit having a signal mixing function for outputting said high frequency signals inputted through the first and second input terminals through said output terminal.