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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Satoshi Teramoto, Naoto Kusumoto, Koichiro Tanaka
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There is provided an improvement on homogeneity of annealing performed utilizing radiation of a laser beam on a silicon film having a large area. In a configuration wherein a linear laser beam is applied to a surface to be irradiated, optimization is carried out on the width and number of cylindrical lenses forming homogenizers 103 and 104 for controlling the distribution of radiation energy density in the longitudinal direction of the linear beam. For example, the width of the cylindrical lenses forming the homogenizers 103 and 104 is set in the range from 0.1 mm to 5 mm, and the number of the lenses is chosen such that one lens is provided for every 5 mm-15 mm along the length of the linear laser beam in the longitudinal direction thereof. This makes it possible to improve homogeneity of the radiation energy density of the linear laser in the longitudinal direction thereof.
An apparatus for radiating a linear laser beam wherein the length of the linear laser beam in the longitudinal direction thereof, as an abscissa, and the number of cylindrical lenses formed within a plane to form a homogenizer for controlling the distribution of energy density of the linear laser beam in the longitudinal direction thereof, as an ordinate, are in the range defined by coordinates represented by (100, 7), (700, 50), (700, 140), and (100, 20), and
A method for radiating a linear laser beam comprising the step of setting the length of the linear laser beam in the longitudinal direction thereof, as an abscissa, and the number of cylindrical lenses formed within a plane to form a homogenizer for controlling the distribution of energy density of the linear laser beam in the longitudinal direction thereof, as an ordinate, in the range defined by coordinates represented by (100, 7), (700, 50), (700, 140), and (100, 20), and
Dependencies are inferred from the claim text.