Method of monitoring deposit in chamber, method of plasma processing, method of dry-cleaning chamber, and semiconductor manufacturing apparatus

A method of plasma processing implemented by using a plasma processing apparatus, said apparatus having a chamber and a window for plasma provided in a part of said chamber to measure light emitted from a plasma in the chamber, said method comprising:

• a first step of mounting a material to be processed in said chamber;
• a second step of introducing processing gas having such a characteristic as to produce a deposit during plasma processing;
• a third step of ionizing the introduced processing gas with an RF electric field to generate the plasma and processing said material to be processed by utilizing said plasma;
• and
• a fourth step of measuring a emission intensity of the plasma in the chamber through said window for plasma, compensating a sensitivity with which the emission intensity in performing the plasma processing is measured such that the emission intensity has a constant initial value, and performing process control with respect to the plasma processing based on a variation in the compensated emission intensity, while said processing is performed.

A method of dry-cleaning a chamber having a window for electromagnetic wave permitting at least any one of electromagnetic waves including a light beam, an X-ray beam, and an electron beam to pass therethrough, said method comprising:

• a first step of introducing cleaning gas into said chamber;
• a second step of removing a deposit on an interior wall of said chamber with said cleaning gas;
• and
• a third step of monitoring, while performing said second step, a state of said deposit by. introducing said electromagnetic wave into said chamber from an outside thereof through said window for electromagnetic wave, ejecting the electromagnetic wave passing through said deposit from said chamber to the outside thereof, and measuring an amount of absorption of the ejected electromagnetic wave by said deposit, wherein
• when the amount of absorption of the electromagnetic wave by said deposit measured in said third step becomes a given value or lower, said second step is completed.