Method for forming interconnection of a semiconductor device
AssigneeLG Semicon Co., Ltd.
InventorYoung Kwon Jun
Life of this patent
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Abstract
A method for forming an interconnection of a semiconductor device, includes the steps of forming an insulating layer on a substrate on which a lower conductive layer is formed, selectively removing the insulating layer to form a first connecting hole and a second connecting hole for the pattern of an upper conductive layer, growing a first conductive material in the first connecting hole to form a buried plug and then depositing a second conductive material on the surface of the insulating layer to form a barrier layer, and depositing a third conductive material on the barrier layer to fill the second connecting hole and then patterning it to form an upper conductive layer.
Claims29
A method for forming an interconnection of a semiconductor device, comprising the steps of:
- forming an insulating layer on a substrate having a lower conductor layer formed thereon, the insulating layer defining a hole portion extending from the lower conductor layer;
- filling the hole portion with a first conductive material to form a first conductive layer, by using a metal organic chemical vapor deposition with a pressure of 0.5-5 torr, a flux of 100-1000 sccm and a temperature of 130-170.degree. C.;
- forming a second conductive layer on the first conductive layer and the insulating layer;
- and
- forming a third conductive layer on the second conductive layer so as to form an interconnection of a semiconductor device.
A method for forming an interconnection of a semiconductor device, comprising the steps of:
- forming a first insulating layer on a substrate having a lower conductor layer formed thereon, the first insulating layer defining a hole extending from the lower conductor layer;
- filling the hole with a first conductive material to form a first conductive layer;
- forming second and third insulating layers on the first insulating layer to define a trench above the hole;
- and
- forming second and third conductive layers in the trench so as to form an interconnection of a semiconductor device,
- wherein the step of forming the second and third insulating layers includes the steps of,
- forming the second insulating layer on the first insulating layer and on the first conductive layer, and
- forming the third insulating layer on the second insulating layer.
A method for forming an interconnection of a semiconductor device, comprising the steps of:
- forming a first insulating layer on a substrate having a lower conductor layer formed thereon, the first insulating layer defining a hole extending from the lower conductor layer;
- filling the hole with a first conductive material to form a first conductive layer, by using a metal organic chemical vapor deposition having a pressure of 0.5-5 torr, a flux of 100-1000 sccm, and a temperature of 130-170.degree. C.;
- forming second and third insulating layers on the first insulating layer to define a trench above the hole;
- and
- forming second and third conductive layers in the trench so as to form an interconnection of a semiconductor device.
Dependencies are inferred from the claim text.