Charged beam lithography method

A charged beam lithography method employing scanning of a charged beam, comprising the steps of:

• obtaining first pattern exposure data related to a desired pattern to be formed on a photo lithographic mask, the desired pattern having a predetermined angles and sides and obtained by enlarging a shape on a wafer by a predetermined magnification being projected onto the wafer by an optical projection and exposure apparatus, and said first pattern exposure data having a first predetermined drawing condition when an electron beam drawing apparatus draws a pattern on the mask;
• obtaining second pattern exposure data related to an auxiliary pattern having a predetermined shape to be formed on the mask for prevention of the desired pattern from being unclear on the wafer when the desired pattern on the mask is projected onto the wafer due to a reduction in the size of the desired pattern on the mask by the optical projection and exposure apparatus, and said second pattern exposure data having a second predetermined drawing condition when the electron beam drawing apparatus draws the pattern on the mask, said second predetermined drawing condition being different from said first predetermined drawing condition;
• forming mask pattern exposure data by combining said first and second pattern exposure data, such that discrimination is possible between said first and second pattern exposure data;
• drawing a pattern using a charged beam lithography apparatus having a function for discriminating at least one of said desired pattern and auxiliary pattern from said mask exposure data including said first and second patterns and capable of discriminating said first and second patterns;
• discriminating the desired pattern from the auxiliary pattern or vice versa based on said mask pattern exposure data comprising both the first pattern exposure data and the second pattern exposure data to produce discriminated results;
• and
• setting a charged beam dose ratio of the desired pattern to the auxiliary pattern on the basis of the discriminated results for use when both the desired pattern and the auxiliary pattern are drawn on the mask by the charged beam.