Multi-step process to incorporate grain growth inhibitors in WC-Co composite
AssigneeNanodyne Incorporated
InventorPurnesh Seegopaul
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AssigneeNanodyne Incorporated
InventorPurnesh Seegopaul
Estimating the term…
Grain growth inhibitors including vanadium carbide, chromium carbide, tantalum carbide, and niobium carbide are incorporated into a cobalt/tungsten carbide matrix during the formation of the cobalt/tungsten carbide matrix. A precursor powder is formed by combining in solution a cobalt composition, a tungsten composition and a grain growth inhibiting metal composition, which is then spray dried. The precursor compound is then carburized in carbon monoxide and carbon dioxide to form cobalt/tungsten carbide matrix. This is then further carburized in a hydrocarbon hydrogen gas at an elevated temperature to cause the grain growth inhibiting metal present to form the carbide. The second carburizing step is conducted with a carburizing gas having a carbon activity greater than about 2 for a relatively short period of time at 900.degree. C. to 1000.degree. C.
A method of forming cobalt/tungsten carbide particles containing a carbide of a grain growth inhibiting metal selected from the group consisting of vanadium, chromium, tantalum and niobium from a precursor powder containing cobalt, tungsten and at least one of said grain growth inhibiting metals comprising subjecting said precursor powder to an initial carburization with a carburizing gas comprising a mixture of carbon monoxide and carbon dioxide at a temperature effective to form tungsten carbide;
Dependencies are inferred from the claim text.