Photovoltaic cell
AssigneeHoechst Aktiengesellschaft
InventorsDonald Lupo, Josef Salbeck
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Abstract
A photovoltaic cell having a charge transport layer comprising a hole conductor material is disclosed and claimed. The photovoltaic cell comprising a light absorbing layer having a semiconductor material with a bassed gap of at least 3.0 Ev, the surface of the semiconductor having a roughness of >20, optionally a sensitizer layer, a charge transport layer comprising one or more spiro compounds of the formula (I) as a hole conductor material ##STR1## where .PSI. is C, Si, Ge or Sn, and K.sup.1 and K.sup.2, independently of one another, are conjugated systems, and a counter electrode.
Claims14
A photovoltaic cell, comprising
- a light absorbing layer which comprises a semiconductor material with a band gap of at least 3.0 Ev, and the surface of said semiconductor having a roughness factor of >20,
- optionally a sensitizer layer,
- a charge transport layer, comprising a hole conductor material which is an amorphous solid, and
- a counter electrode.
A photovoltaic cell, comprising
- a light absorbing layer,
- optionally a sensitizer layer,
- a charge transport layer comprising one or more spiro compounds of the formula (I) as a hole conductor material ##STR32## where .PSI. is C, Si, Ge or Sn, and
- K.sup.1 and K.sup.2, independently of one another, are conjugated systems.
Dependencies are inferred from the claim text.