Ultrathin electronics

A method for coupling a first active layer of a first semiconductor device to a second active layer of a second semiconductor device, the method comprising the steps of:

• forming a first interconnect via on a bottom surface of said first active layer which is electrically and mechanically coupled to a metal interconnect placed on a top surface of said first active layer;
• forming a second interconnect via on a second surface of said second active layer which is electrically and mechanically coupled to a metal interconnect placed on a top surface of said first active layer;
• visually aligning said first interconnect via of said first active layer and said second interconnect via of said second active layer so that a pad of said first interconnect via of said first active layer is disposed generally opposite to a pad of said second interconnect via of said second active layer, said visually aligning step is accomplished by viewing through a window of insulative material unobscured by the metal interconnect within the first active layer;
• applying a Nitride bonding element to one of said pad of said first interconnect via and said pad of said second interconnect via;
• joining said pad of said first interconnect via on said bottom surface of said first active layer and said pad of said second interconnect via on said bottom surface of said second active layer to said Nitride bonding element;
• and
• activating said Nitride bonding element to couple said first active layer to said second active layer.

A method for creating an electronic device comprising the steps of:

• separating a first active layer from a first semiconductor device, said first active layer functioning as a complete integrated circuit and including a field oxide layer, an epitaxy layer partially deposited over and disjoined by the field oxide layer and a metal interconnect partially placed over said field oxide layer and said epitaxy layer allowing for at least one field oxide window to be present;
• forming a first interconnect via within said field oxide layer of said first active layer by undergoing a first etching process;
• separating a second active layer from a second semiconductor device, said second active layer including a field oxide layer, an epitaxy layer deposited over and disjoined by the field oxide layer and a metal interconnect placed over said field oxide layer and said epitaxy layer;
• forming a second interconnect via within said field oxide layer of said second active layer by undergoing a second etching process;
• and
• joining said first active layer and said second active layer by (i) visually aligning a first pad on said first active layer with a second pad on said second active layer by viewing through the at least one field oxide window of the first active layer, and (ii) electrically coupling said first active layer with said second active layer.