Method of making charge-coupled device with microlens
AssigneeLG Semicon Co., Ltd.
InventorsChul Ho Park, Kwang Bok Song
Life of this patent
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Abstract
A CCD and manufacturing method thereof is disclosed including: a first conductivity-type substrate having a convex portion; a first conductivity-type charge transmission domain formed on the substrate excluding the convex portion; a light detecting domain formed on the convex portion of the substrate and having a convex top surface; a second conductivity-type high-concentration impurity area formed on the top surface of the light detecting domain; a gate insulating layer formed on the substrate excluding the light detecting domain; a transmission gate formed on the gate insulating layer; a planarization layer formed on the substrate including the transmission gate; and a microlens formed on the planarization layer above a photodiode.
Claims4
A method of manufacturing a CCD comprising the steps of:
- etching a first conductivity-type substrate to thereby form a convex portion;
- ion-implanting a first conductivity-type impurity into said substrate excluding said convex portion to thereby form a first conductivity-type charge transmission domain;
- sequentially forming a gate insulating layer and transmission gate on said substrate above said charge transmission domain;
- ion-implanting a first conductivity-type impurity into said convex portion of said substrate, using said transmission gate as a mask, to thereby form a convex light detecting area;
- ion-implanting a second conductivity-type high-concentration impurity into said light detecting area to thereby form a second conductivity-type high-concentration impurity area on the surface of said light detecting area;
- forming a planarization layer over said substrate;
- and
- forming a microlens on said planarization layer above a photodiode.
Dependencies are inferred from the claim text.