Flexible interconnect film including resistor and capacitor layers

A composite thin film structure for use in fabrication of a flexible interconnect film including passive components, the composite thin film structure comprising:

• a dielectric film comprising a polyimide;
• a resistor layer overlying at least a portion of the dielectric film and comprising tantalum nitride (Ta.sub.2 N);
• a first metallization layer overlying at least a portion of the resistor layer, the resistor layer facilitating adhesion of the dielectric film and the first metallization layer and comprising copper;
• a capacitor dielectric layer overlying the first metallization layer and comprising amorphous hydrogenated carbon or tantalum oxide (Ta.sub.2 O.sub.5), and
• a second metallization layer overlying the capacitor dielectric layer.

A flexible interconnect film including passive components, the flexible interconnect film comprising:

• a dielectric film;
• a resistor layer overlying at least a portion of the dielectric film;
• a metallization layer overlying at least a portion of the resistor layer, the metallization layer being patterned over the resistor layer to form a resistor, the metallization and resistor layers being patterned over the dielectric film to form and a first capacitor electrode, the resistor layer comprising a material facilitating adhesion of the dielectric film and the metallization layer;
• a capacitor dielectric layer overlying the first capacitor electrode;
• and
• a second capacitor electrode overlying the capacitor dielectric layer, the first capacitor electrode, the capacitor dielectric layer, and the second capacitor electrode comprising a capacitor, the passive components comprising the resistor and the capacitor.

A flexible interconnect film comprising:

• a dielectric filmcomprising a polyimide;
• first and second resistor layers comprising tantalum nitride (Ta.sub.2 N) and overlying at least portions of respective first and second surfaces of the dielectric film;
• first and second metallization layers overlying at least portions of respective first and second resistor layers,
• at least one of the first and second metallization layers being patterned to form a resistor,
• at least one of the first and second metallization layers and a respective one of the first and second resistor layers being patterned over the dielectric film to form an inductor,
• at least one of the first and second metallization layers and a respective one of the first and second resistor layers being patterned over the dielectric film to form a first capacitor electrode,
• at least one of the first and second metallization layers and a respective one of the first and second resistor layers being patterned over the dielectric film to form an interconnect area,
• the first and second resistor layers comprising a material facilitating adhesion of the dielectric film and the first and second metallization layers;
• a capacitor dielectric layer overlying the first capacitor electrode and comprising amorphous hydrogenated carbon or tantalum oxide (Ta.sub.2 O.sub.5);
• and
• a second capacitor electrode overlying the capacitor dielectric layer.

A flexible interconnect film comprising:

• a dielectric film;
• a resistor layer overlying at least a portion of the dielectric film;
• a metallization layer overlying at least a portion of the resistor layer, the metallization and resistor layers being patterned over the dielectric film to form a first capacitor electrode, the resistor layer comprising a material facilitating adhesion of the dielectric film and the metallization layer;
• a capacitor dielectric layer overlying the first capacitor electrode;
• and
• a second capacitor electrode overlying the capacitor dielectric layer.