Method of treating a semi-conductor wafer
AssigneeTrikon Technologies Limited
InventorChristopher David Dobson
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Abstract
A wafer processing method relates to treating a semi-conductor wafer and in particular, but not exclusively, to planarization. The method consists of depositing a liquid short-chain polymer formed from a silicon containing gas or vapor. Subsequently water and OH are removed and the layer is stabilised.
Claims25
A method of treating a semi-conductor wafer, said method steps consisting essentially of:
- positioning the wafer in a chamber;
- introducing into the chamber silicon-containing gas or vapour and a compound, containing peroxide bonding, in vapour form;
- and
- spontaneously reacting the silicon-containing gas or vapour with the compound to form a short-chain polymer on the wafer to form a generally planar layer.
A method as claimed in claimed 1 wherein the wafer is located on a platen maintained at or below the dew point of the silicon-containing vapour.
A method of treating a semi-conductor wafer, said method steps consisting essentially of:
- positioning the wafer in a chamber;
- introducing into the chamber silicon-containing gas or vapour and a compound containing peroxide bonding, in vapour form, which gas or vapour and compound are capable of reacting spontaneously to form a short-chain polymer;
- and
- reacting the silicon-containing gas or vapour with the compound to form the short-chain polymer on the wafer to form a generally planar layer.
Dependencies are inferred from the claim text.