Back to results
US 5,874,131 AGranted
CVD method for forming metal-containing films
AssigneeMicron Technology, Inc.
InventorsBrian A. Vaartstra, Brenda D. Wanner
Life of this patent
Estimating the term…
Abstract
A method of forming a film on a substrate using Group III metal complexes, including Group IIIA metals and Group IIIB metals, which include the lanthanides. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
Claims35
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a precursor comprising one or more complexes of the formula:
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.x ML.sub.y (Formula I)
- wherein:
- M is a Group III metal;
- each R.sup.1, R.sup.2, R.sup.2, and R.sup.4 group is independently H or an organic group;
- L is H or an organic group;
- x=1 to 4;
- and
- y=0 to 4;
- and
- forming a metal-containing film from the precursor on a surface of the semiconductor substrate or substrate assembly.
9 more elements
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a precursor comprising one or more complexes of the formula:
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.x ML.sub.y (Formula I)
- wherein:
- M is a Group III metal;
- each R.sup.1, R.sup.2, R.sup.3, and R.sup.4 group is independently H or a (C.sub.1 -C.sub.30)organic group;
- L is H or a (C.sub.1 -C.sub.30) organic group, with the proviso that if M is a Group IIIA metal, at least one L is present and is H;
- x=1 to 4;
- and
- y=0 to 4;
- and
- vaporizing the precursor to form vaporized precursor;
- and directing the vaporized precursor toward the semiconductor substrate or substrate assembly to form a metal-containing film on a surface of the semiconductor substrate or substrate assembly.
10 more elements
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a precursor comprising one or more hydride complexes of the formulas:
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH (Formula III);
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH.sub.2 (Formula IV);
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MHR.sup.5 (Formula V);
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MH (Formula VI);
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MHR.sup.5 (Formula VII);
- o r
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.3 MH (Formula VIII)
- wherein:
- M is a Group III metal;
- R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are each independently H or an organic group;
- and
- R.sup.5 is an organic group;
- and
- forming a metal-containing film from the precursor on a surface of the semiconductor substrate or substrate assembly.
13 more elements
A method of manufacturing a semiconductor structure, the method comprising:
- providing a semiconductor substrate or substrate assembly;
- providing a precursor comprising one or more hydride complexes of the formulas:
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH (Formula III);
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH.sub.2 (Formula IV);
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MHR.sup.5 (Formula V);
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MH (Formula VI);
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MHR.sup.5 (Formula VII), o r
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.3)!.sub.3 MH (Formula VIII)
- wherein:
- M is a Group IIIA metal;
- R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are each independently H or a (C.sub.1 -C.sub.30)organic group;
- and
- R.sup.5 is a (C.sub.1 -C.sub.30)organic group;
- and
- vaporizing the precursor to form vaporized precursor;
- and directing the vaporized precursor toward the semiconductor substrate or substrate assembly to form a metal-containing film on a surface of the semiconductor substrate or substrate assembly.
13 more elements
A method of forming a film on a substrate, the method comprising:
- providing a substrate;
- providing a precursor comprising one or more complexes of the formula:
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.x ML.sub.y (Formula I)
- wherein:
- M is a Group III metal;
- each R.sup.1, R.sup.2, R.sup.3, and R.sup.4 is independently H or an organic group;
- L is H or an organic group;
- x=1 to 4;
- and
- y=0 to 4;
- and
- forming a metal-containing film from the precursor on a surface of the substrate.
9 more elements
A method of forming a film on a substrate, the method comprising:
- providing a substrate;
- providing a precursor comprising one or more complexes of the formula:
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.x ML.sub.y (Formula I)
- wherein:
- M is a Group III metal;
- each R.sup.1, R.sup.2, R.sup.3, and R.sup.4 is independently H or a (C.sub.1 -C.sub.30)organic group;
- L is H or a (C.sub.1 -C.sub.30) organic group, with the proviso that if M is a Group IIIA metal, at least one L is present and is H;
- x=1 to 4;
- and
- y=0 to 4;
- and
- vaporizing the precursor to form vaporized precursor;
- and directing the vaporized precursor toward the substrate to form a metal-containing film on a surface of the substrate.
10 more elements
A method of forming a film on a substrate, the method comprising:
- providing a substrate;
- providing a precursor comprising one or more hydride complexes of the formulas:
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH (Formula III);
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH.sub.2 (Formula IV);
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MHR.sub.5 (Formula V);
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MH (Formula VI);
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MHR.sup.5 (Formula VII);
- o r
- (R.sup.1)NC(R.sup.2)C(R 3)N(R.sup.4)!.sub.3 MH (Formula VIII)
- wherein:
- M is a Group III metal;
- R.sup.1, R.sup.2, R.sub.3, and R.sub.4 are each independently H or an organic group;
- and
- R.sub.5 is an organic group;
- and
- forming a metal-containing film from the precursor on a surface of the substrate.
13 more elements
A method of forming a film on a substrate, the method comprising:
- providing a substrate;
- providing a precursor comprising one or more hydride complexes of the formulas:
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH (Formula III);
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MH.sub.2 (Formula IV);
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!MHR.sup.5 (Formula V);
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MH (Formula VI);
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.2 MHR.sup.5 (Formula VII);
- o r
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.3 MH (Formula VIII)
- wherein:
- M is a Group IIIA metal;
- R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are each independently H or a (C.sub.1 -C.sub.30)organic group;
- and
- R.sup.5 is a (C.sub.1 -C.sub.30)organic group;
- and
- vaporizing the precursor to form vaporized precursor;
- and directing the vaporized precursor toward the substrate to form a metal-containing film on a surface of the substrate.
14 more elements
A method of fabricating an interconnect for use in an integrated circuit, comprising:
- providing a semiconductor structure comprising a contact hole;
- and
- forming an aluminum alloy in the contact hole, wherein the aluminum alloy comprises at least one Group III metal other than aluminum, wherein the non-aluminum Group III metal is provided utilizing a chemical vapor deposition technique with a precursor comprising one or more complexes of the formula:
- (R.sup.1)NC(R.sup.2)C(R.sup.3)N(R.sup.4)!.sub.x M (Formula II),
- wherein:
- M is a Group III metal other than aluminum;
- each R.sup.1, R.sup.2, R.sup.3, and R.sup.4 group is independently H or fin organic group;
- and
- x=1 to 4.
6 more elements
A method of fabricating a metal line in an integrated circuit, comprising:
- providing a semiconductor structure comprising an active area;
- and
- forming an aluminum alloy on the structure such that the aluminum alloy is electrically connected to the active area, wherein the aluminum alloy comprises at least one Group III in addition to aluminum, wherein the non-aluminum Group III metal is provided utilizing a chemical vapor deposition technique with a precursor comprising one or more complexes of the formula:
- (R.sup.1)NC(R.sup.2)C(R.sub.3)N(R.sup.4)!.sub.x M (Formula II),
- wherein:
- M is a Group III metal other than aluminum;
- each R.sup.1, R.sup.2, R.sup.3 and R.sub.4 group is independently H or an organic group;
- and
- x=1 to 4.
6 more elements
Dependencies are inferred from the claim text.