Method of manufacturing a group II-VI compound semiconductor
AssigneeMitsubishi Kasei Corporation
InventorsKenji Shimoyama, Toshinari Fujimori, Hideki Goto
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Abstract
The disclosure describes a method of manufacturing a Group II-VI compound semiconductor thin film by a vapor-phase epitaxy using an organic metal compound of Group II element and a hydride or an organic metal compound of Group VI element as the raw material, which comprises repeating alternate introduction of an organic metal compound of Group II element and a halide gas, a halogen gas or a mixture thereof; or adding a halide gas, a halogen gas or a mixture thereof to a gas for vapor-phase epitaxy.
Claims12
A method of manufacturing a Group II-VI compound semiconductor thin film by a vapor-phase epitaxy using an organic metal compound of Group II element and a hydride or an organic metal compound of Group VI element as a raw material, which comprises repeating alternate introduction of an organic metal compound of Group II element and a halide gas, a halogen gas or a mixture thereof,
- the total pressure of the gas supplied being lower than an ordinary pressure, the hydride or organic metal compound of Group VI element being introduced into the growth chamber during a period in which said Group II organic metal compound is being introduced, and wherein the Group II-VI compound semiconductor thin film grows during said period.
A method of manufacturing a Group II-VI compound semiconductor thin film by a vapor-phase epitaxy using an organic metal compound of Group II element and a hydride or an organic metal compound of Group VI element as a raw material, which comprises adding a halide gas, a halogen gas or a mixture thereof to a gas for vapor-phase epitaxy,
- the total pressure of the gas supplied being lower than an ordinary pressure, the hydride or organic metal compound of Group VI element being introduced into the growth chamber during a period in which said Group II organic metal compound is being introduced, and wherein the Group II-VI compound semiconductor thin film grows during said period.
A method of manufacturing a Group II-VI compound semiconductor thin film by a vapor-phase epitaxy using an organic metal compound of Group II element and a hydride or an organic metal compound of Group VI element as a raw material, which comprises repeating alternate introduction of an organic metal compound of Group II element and a halide gas, a halogen gas or a mixture thereof and wherein the vapor-phase epitaxy is conducted in a selective growth region.
A method of manufacturing a Group II-VI compound semiconductor thin film by a vapor-phase epitaxy using an organic metal compound of Group II element and a hydride or an organic metal compound of Group VI element as a raw material, which comprises adding a halide gas, a halogen gas or a mixture thereof to a gas for vapor-phase epitaxy and wherein the vapor-phase epitaxy is conducted in a selective growth region.
Dependencies are inferred from the claim text.