Metal base package for a semiconductor device
AssigneeNEC Corporation
InventorsKatsunobu Suzuki, Katsuhiko Suzuki, Akira Haga, Isamu Sorimachi, Hiroyuki Uchida
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AssigneeNEC Corporation
InventorsKatsunobu Suzuki, Katsuhiko Suzuki, Akira Haga, Isamu Sorimachi, Hiroyuki Uchida
Estimating the term…
A laminate package structure for a semiconductor device having a high resistance to humidity, reliability and electrical performance. A polyimide layer and copper foil patterns are formed on a metal base in the form of metal sheet. The metal base comprises a ground pattern maintained at the ground potential, and a plurality of land patterns on which solder balls are formed. The copper foil pattern comprises an island pattern on which an LSI chip is mounted, and an internal wiring patterns connected to electrodes of the LSI chip. The metal base pattern and the internal wiring patterns are electrically interconnected through via-plugs formed in through-holes by an electrolytic plating. A cap is adhesively bonded to the laminated metal base or one of the metal foil patterns.
A laminate package structure for a semiconductor device comprising a metal base forming a plurality of base patterns including a plurality of land patterns and at least one ground pattern disposed in spaced relationship with said land patterns, wherein said at least one ground pattern includes a ring pattern disposed around an outer periphery of said package structure and a central pattern surrounded by said ring pattern, at least one of said ring pattern and central pattern being grounded, and insulating layer made of an organic insulator formed on said metal base, said insulating layer having a plurality of through-holes, a plurality of via-plugs each formed in a corresponding one of said through-holes, a metal foil layer forming a plurality of foil patterns formed on said insulating layer and including a plurality of interconnect patterns, said land patterns and ground patterns being connected to said interconnect patterns through said via-plugs.
A laminate package structure for a semiconductor device comprising a metal base forming a plurality of base patterns including a plurality of land patterns and at least one ground pattern disposed in spaced relationship with said land patterns, an insulating layer made of an organic insulator formed on said metal base, said insulating layer having a plurality of through-holes a plurality of via-plugs each formed in a corresponding one of said through-holes, a metal foil layer forming a plurality of foil patterns formed on said insulating layer and including a plurality of interconnect patterns, said land patterns and ground pattern being connected to said interconnect patterns through said via-plugs, further comprising another insulating layer and another metal foil layer consecutively formed on said metal foil layer, said another insulating layer having at least one via-hole therein, and another via-plug formed in said via-hole, said another metal foil layer including another interconnect pattern connected to a corresponding one of said interconnect patterns through said another via-plug.
A laminate package structure comprising a first laminate section, a second laminate section, a first insulating layer having a via-hole, and a via-plug formed in said via-hole, each of said first and second section including a metal base forming a plurality of base patterns including a plurality of land patterns and at least one ground pattern disposed in spaced relationship with said land patterns, a second layer made of an organic insulator formed on said metal base, said second insulating layer having a plurality of first through-holes, a plurality of first via-plugs each formed in a corresponding one of said through-holes, a metal foil layer forming a plurality of foil patterns formed on said second insulating layer and including a plurality of interconnect patterns, said land patterns and ground pattern being connected to said interconnect patterns through said first via-plugs, wherein said first laminate section and second laminate section are disposed opposite to each other, said second insulating layers of both said laminate sections being opposed to each other with said first insulating layer disposed therebetween, wherein said metal foil layers of both said laminate sections are connected to each other through said second via-plugs, and wherein said second laminate section further includes flip-flop bumps formed on said land patterns.
Dependencies are inferred from the claim text.