Method of depositing thin metal films
AssigneeDefense Evaluation and Research Agency
InventorAnthony Copland Jones
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Abstract
A method of depositing a Group IIIA metal layer of high purity on a substrate comprises pyrolyzing contacting the substrate with a tritertiary butyl compound of the Group IIIA metal and pyrolyzing the compound to leave the Group IIIA metal deposited on the substrate. The method of the invention may be used on any suitable substrate, such as silicon or polyimide. The method of the invention may be used for the growth of Group IIIA/silicon alloys as well as for depositing semi-conducting III-V alloys such as, for example, AlGaAs, AlInAs and AlSb.
Claims11
A method of depositing an aluminum or indium film on a substrate comprising the steps of contacting the substrate with an aluminum or indium precursor and treating the precursor to decompose leaving the aluminum or indium deposited in the substrate, wherein the precursor is the tritertiarybutyl compound of aluminum or indium.
A composition of matter comprising a substrate having an aluminium or indium layer deposited thereon by contacting the substrate with an aluminium or indium precursor and treating the precursor to decompose leaving the aluminium or indium deposited on the substrate, wherein the precursor is the tritertiarybutyl compound of aluminium or indium.
Dependencies are inferred from the claim text.