US 5,862,168 A · Monolithic integrated optical semiconductor component

Abstract

Monolithic integrated optical semiconductor components with a buried ridge stripe waveguide (BRS) are used for optical communications. They contain active (AB) and passive (PB) waveguide regions. High absorption losses occur in passive waveguide regions with a buried ridge stripe waveguide, while passive waveguide regions with low-loss rib waveguides have reflections and leakage losses in the junction with the active waveguide regions. A semiconductor component (BE2) according to the invention has a buried ridge stripe waveguide (BRS) in active (AB) as well as passive (PB) waveguide regions, which is covered by a cap layer (DS). In addition the passive regions (PB) have a semi-insulating or undoped cladding layer (MS) between the ridge stripe waveguide (BRS) and the cap layer (DS). A process is furthermore indicated whereby a semiconductor component according to the invention can be manufactured.

Claims10

Dependent claims

A monolithic integrated optical semiconductor device (BE1, BE2) designed for light signals of an operating wavelength (.lambda.), comprising:

a substrate (SUB),
an optical waveguide (BRS) disposed on said substrate (SUB), and
a doped cap layer (DS) having an absorption coefficient for light signals of the operating wavelength (.lambda.),
wherein the optical waveguide (BRS)
has an active, controllably light-amplifying or light-absorbing section (AB, AB1, AB2, AB3) and a passive, nonamplifying section (PB), and
is a buried ridge stripe waveguide in both the active section (AB, AB1, AB2, AB3) and the passive section (PB),
characterized in that
in the passive section (PB), the optical waveguide (BRS) is covered by a cladding layer (MS),
the cladding layer (MS) has an absorption coefficient for light signals of the operating wavelength (.lambda.) less than the absorption coefficient of the cap layer (DS), and
in the passive section (PB), the cladding layer (MS) is covered by the cap layer (DS).

7 more elements

A process for fabricating an optical semiconductor device (BE1, BE2) having a buried ridge stripe waveguide comprising active, controllably light-amplifying or light-absorbing sections (AB, AB1, AB2, AB3) and passive, nonamplifying sections (PB), said process comprising the steps of:

a) depositing a semiconductor layer structure patterned to form a ridge stripe waveguide (BRS) on a substrate (SUB);
b) depositing a cap layer (DS) over the entire surface of the patterned structure and a contact layer (KS) over the entire surface of the cap layer (DS);
and
c) depositing a metal contact (MK2) on the contact layer in the active sections (AB, AB1, AB2, AB3), characterized in that the following steps are carried out between steps a) and b):
i) covering the active sections (AB, AB1, AB2, AB3) with a dielectric layer (MASK);
ii) depositing a cladding layer (MS) of semi-insulating or undoped semiconductor material;
and
iii) removing the dielectric layer (MASK).

5 more elements

Dependencies are inferred from the claim text.

Monolithic integrated optical semiconductor component

Life of this patent

Monolithic integrated optical semiconductor component

Life of this patent

Abstract

Claims10