Semiconductor laser with light emitting slant plane and method of manufacturing the same

A semiconductor laser comprising:

• a first lower clad layer;
• a second lower clad layer, formed over said first lower clad layer;
• an active layer, formed over said second lower clad layer;
• and
• a first upper clad layer, formed over said active layer;
• wherein each of said first lower clad layer, said second lower clad layer, said active layer, and said first upper clad layer, has upper and lower surfaces, each of said upper and lower surfaces including an upper flat surface, a lower flat surface and a slanted surface coupling the upper flat surface with the lower flat surface,
• the upper flat surfaces and the lower flat surfaces are parallel to each other,
• the slanted surfaces are parallel to each other,
• edges formed between said upper flat surfaces and slanted surfaces of said upper and lower surfaces of said first lower clad layer lie in a first virtual plane,
• edges formed between said lower flat surfaces and slanted surfaces of said upper and lower surfaces of said first lower clad layer lie in a second virtual plane,
• edges formed between said upper flat surfaces and slanted surfaces of said upper and lower surfaces of said second lower clad layer lie in a third virtual plane,
• edges formed between said lower flat surfaces and slanted surfaces of said upper and lower surfaces of said second lower clad layer lie in a fourth virtual plane, and
• a pair of two planes selected from a group consisting of a pair of said first and third virtual planes, and a pair of said second and fourth virtual planes are not parallel to each other.

A semiconductor laser comprising:

• a first lower clad layer;
• an active layer, formed over said first lower clad layer;
• a first upper clad layer, formed over said active layer;
• and
• a second upper clad layer, formed over said first upper clad layer;
• wherein
• each of said first lower clad layer, said active layer, said first upper clad layer, and said second upper clad layer has upper and lower surfaces, each of said upper and lower surfaces including an upper flat surface, a lower flat surface and a slanted surface coupling the upper flat surface with the lower flat surface,
• the upper flat surfaces and the lower flat surfaces are parallel to each other,
• the slanted surfaces are parallel to each other,
• edges formed between said upper flat surfaces and slanted surfaces of said upper and lower surfaces of said first upper clad layer lie in a first virtual plane,
• edges formed between said lower flat surfaces and slanted surfaces of said upper and lower surfaces of said first upper clad layer lie in a second virtual plane,
• edges formed between said upper flat surfaces and slanted surfaces of said upper and lower surfaces of said second upper clad layer lie in a third virtual plane,
• edges formed between said lower flat surfaces and slanted surfaces of said upper and lower surfaces of said second upper clad layer lie in a fourth virtual plane, and
• a pair of two planes selected from a group consisting of a pair of said first and third virtual planes, and a pair of said second and fourth virtual planes are not parallel to each other.