Device for protection after a page-write operation in an electrically programmable memory
AssigneeSGS-Thomson Microelectronics S.A.
InventorsBruno Leconte, Alessandro Brigati, Jean Devin
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Abstract
A FLASH memory is compatible with a standard EEPROM memory in terms of a write-by-page instruction with write protection. A circuit successively addresses one of the columns of a storage matrix in order to write a page previously stored in buffers, and the circuit addresses the writing of a protection bit after the writing of the page.
Claims13
A circuit for the sequencing of write operations in a floating-gate type memory, comprising a storage matrix being programmable by hot electrons and buffers for temporarily storing data elements of a page, the floating-gate type memory having a write-by-page instruction with write protection, the circuit comprising:
- first means for successively addressing one of the columns of the storage matrix to write contents of each of the buffers into a page of the memory and for reporting an end of the writing into the page;
- and
- second means for addressing the writing of a protection bit only if the first means reports the end of the writing into the page and if an indicator bit indicates that the protection bit has to be activated.
A floating-gate type memory circuit having a write-by-page instruction with write protection, said memory circuit comprising:
- a storage matrix of floating-gate type cells being programmable by hot electrons;
- a plurality of buffers for temporarily storing data elements of a page;
- and
- sequencing means for sequencing write operations, said sequencing means comprising:
- first means for successively addressing one of the columns of the storage matrix to write contents of each of the buffers into a page of the memory and for reporting an end of the writing into the page;
- and
- second means for addressing the writing of a protection bit only if the first means reports the end of the writing into the page and if an indicator bit indicates that the protection bit has to be activated.
A circuit for the sequencing of write operations in a floating-gate type memory comprising a storage matrix being programmable by hot electrons and buffers for temporarily storing data elements of a page, the floating-gate type memory having a write-by-page instruction with write protection, the circuit comprising:
- a counter having a first input to receive a clock signal corresponding to a write signal, a second input to receive a reset signal, a parallel output to provide a number corresponding to an address of the one of the columns of the storage matrix, and an end-of-counting output to report that counting is finished and that the programming of the page is finished;
- and
- second means for addressing the writing of a protection bit only if the first means reports the end of the writing into the page and if an indicator bit indicates that the protection bit has to be activated.
A method for the sequencing of write operations in a floating-gate type memory comprising a storage matrix being programmable by hot electrons and buffers for temporarily storing data elements of a page, the floating-gate type memory having a write-by-page instruction with write protection, the method comprising the steps of:
- successively addressing one of the columns of the storage matrix to write contents of each of the buffers into a page of the memory and reporting an end of the writing into the page;
- and
- addressing the writing of a protection bit only if the first means reports the end of the writing into the page and if an indicator bit indicates that the protection bit has to be activated.
Dependencies are inferred from the claim text.