Method and apparatus for tuning a process recipe to target dopant concentrations in a doped layer

A computer program product for tuning a process recipe for targeted dopant concentrations in a doped film, said computer program product comprising:

• computer readable code defining a process of receiving as input a target dopant concentration and starting dopant flow rates;
• computer readable code defining a process of determining a dopant concentration using said starting dopant flow rates and process characterization data;
• computer readable code defining a process of comparing said dopant concentration with said target dopant concentration;
• computer readable code defining a process, if said dopant concentration is not substantially equal to said target dopant concentration, of calculating updated dopant flow rates using said dopant concentration and process characterization data, determining an updated dopant concentration using said updated dopant flow rates and process characterization data, and comparing said updated dopant concentration with said target dopant concentration;
• computer readable code defining a process, if said updated dopant concentration is not substantially equal to said target dopant concentration, of resetting said updated dopant flow rates as starting dopant flow rates and repeating said steps of calculating updated dopant flow rates, determining an updated dopant concentration, and comparing said updated dopant concentration until said updated dopant concentration is substantially equal to said target dopant concentration, and of setting said updated dopant flow rates as actual dopant flow rates;
• and
• a tangible medium that stores the computer readable codes.

A substrate processing apparatus comprising:

• a processing chamber;
• a gas delivery system configured to deliver a process gas to said processing chamber, said process gas including sources of dopants;
• a heating system configured to heat said chamber to a selected temperature;
• a controller configured to control said gas delivery system and said heating system;
• a first computer program product, coupled to said controller, comprising a computer-readable medium storing a computer-readable program for directing the operation of said substrate processing apparatus, said program including a first set of instructions to form a doped film on said substrate from said process gas, said first set of instructions including a first subset of instructions for controlling said gas delivery system to introduce said sources of dopants into said chamber at selected first rates of introduction during a first time period;
• and
• a second computer program product, coupled to said controller, comprising a computer-readable medium storing a tuning program for tuning the operation of said substrate processing apparatus to converge to target dopant concentrations in the doped film, said tuning program receiving as inputs the target dopant concentrations and the first rates of introduction to produce second rates of introduction during a second time period based on process characterization equations for use by said program.