Process monitoring system for real time statistical process control
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorHung-Yeh Li
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorHung-Yeh Li
Estimating the term…
This invention describes a method to monitor process parameters from multiple process machines to provide real time statistical process control (SPC). The particular implementation was derived from ion implantation of wafers, but has wide applicability where there are a number of process machines having a number of process parameters and close continuous sampling of data is required. The process parameters are collected on a single computer over a single RS 485 network, and each parameters is analyzed and displayed separately for each process and process machine. Statistical variables like Cp and Cpk arc calculated and presented on the computer screen along with graphs of the various parameters for a particular process machine. Data is aged out of the computer to an archival data base under the control of a manufacturing information system and connected to a company wide network.
A process parameter monitoring system for real time SPC, and comprising:
A process control and data collection system for wafer fabrication process SPC, and comprising:
A method for real time process control by means of a process control computer connected to wafer fabrication machinery through a network, and comprising:
Dependencies are inferred from the claim text.