Ferromagnetic tunnel junction, magnetoresistive element and magnetic head
AssigneeTDK Corporation
InventorsKiyoshi Noguchi, Taro Oike, Satoru Araki, Manabu Ohta, Masashi Sano
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Abstract
This invention is directed to a ferromagnetic tunnel junction, an MR element and a magnetic head. A ferromagnetic tunnel junction is constituted by sequentially laminating a first ferromagnetic film, an insulating film and a second ferromagnetic film. These are laminated on an appropriate insulating substrate. The present invention is characterized in that the barrier potential of the insulating film is set within a range of 0.5 to 3 eV. A ferromagnetic tunnel junction with which a high MR ratio can be achieved with good reproduction characteristics is provided.
Claims52
A ferromagnetic tunnel junction constituted by sequentially laminating a first ferromagnetic film, an insulating film and a second ferromagnetic film, wherein:
- the barrier potential of said insulating film is within a range of 0.5 to 3 eV.
A magnetoresistive element comprising:
- a ferromagnetic tunnel junction including an insulating film, a first ferromagnetic film and a second ferromagnetic film, with said first ferromagnetic film and said second ferromagnetic film laminated via said insulating film, the barrier potential of said insulating film being within a range of 0.5 to 3 eV.
A magnetic head comprising:
- a slider with an air bearing surface at a side thereof facing opposite a magnetic recording medium;
- and
- at least one magnetic conversion element having a ferromagnetic tunnel junction, said ferromagnetic tunnel junction including an insulating film, a first ferromagnetic film and a second ferromagnetic film with said first ferromagnetic film and said second ferromagnetic film being laminated via said insulating film, the barrier potential of said insulating film being within a range of 0.5 to 3 eV.
Dependencies are inferred from the claim text.