Semiconductor device having WNF film and method of manufacturing such a device
AssigneeKabushiki Kaisha Toshiba
InventorsKeiichi Sasaki, Iwao Kunishima
Life of this patent
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Abstract
The tungsten nitride film containing fluorine is used as a barrier metal in the contact hole or via hole of the semiconductor device. The tungsten nitride film formed contains 1% to 20% fluorine at atomic density. With this structure, it is possible to obtain a WNF film having a good step coverage for a fine hole.
Claims23
A semiconductor device comprising:
- a first conductive layer:
- an insulating layer in which a hole section which is made through to said first conductive layer;
- and
- a second conductive layer formed in said hole section, at least a part of said second conductive layer being made of a tungsten nitride film containing fluorine at an atomic density of 1% to 20%.
A semiconductor device comprising:
- a first conductive layer formed on a main surface of a semiconductor substrate, and constituting a source-drain diffusion layer of a MOS transistor;
- an insulating layer formed on the main surface of said semiconductor substrate, and having a hole section which is made through to said first conductive layer;
- a second conductive layer formed in said hole section, a lower portion of said second conductive layer being connected to said first conductive layer, at least a part of said second conductive layer being made of a tungsten nitride film containing fluorine at an atomic density of 1% to 20%;
- and
- a third conductive layer connected to an upper portion of said second conductive layer, and constituting an electrode or a wire.
A semiconductor device comprising:
- a first conductive layer formed on a main surface of a semiconductor substrate, and constituting a source-drain diffusion layer of a MOS transistor;
- an insulating layer formed on the main surface of said semiconductor substrate, and having a hole section which is made through to said first conductive layer, and a groove section connected to the hole section;
- a second conductive layer formed in said hole section, a lower portion of said second conductive layer being connected to said first conductive layer;
- and
- a third conductive layer formed in said groove section, and connected to an upper portion of said second conductive layer, such as to constitute a wiring,
- wherein at least a part of said second conductive layer and a part of said third conductive layer being made of a tungsten nitride film containing fluorine at an atomic density of 1% to 20%.
A semiconductor device comprising:
- a first insulating film formed on a main surface of a semiconductor substrate having a MOS transistor;
- a first conductive layer formed on an upper side of said first insulating film, and constituting a first wiring;
- a second insulating film formed on the upper side of said first insulating film and said first conductive film, and having a hole section which is made through to said first conductive layer;
- a second conductive layer formed in said hole section, a lower portion of said second conductive layer being connected to said first conductive layer, at least a part of said second conductive layer being made of a tungsten nitride film containing fluorine at an atomic density of 1% to 20%;
- and
- a third conductive layer connected to an upper portion of said second conductive layer, and constituting a second wiring.
A semiconductor device comprising:
- a first insulating film formed on a main surface of a semiconductor substrate having a MOS transistor;
- a first conductive layer formed on an upper side of said first insulating film, and constituting a first wiring;
- a second insulating film formed on the upper side of said first insulating film and said first conductive film, and having a hole section which is made through to said first conductive layer, and a groove section connected to the hole section;
- a second conductive layer formed in said hole section, a lower portion of said second conductive layer being connected to said first conductive layer;
- and
- a third conductive layer formed in said groove section, and connected to an upper portion of said second conductive layer, such as to constitute a second wiring,
- wherein at least a part of said second conductive layer and a part of said third conductive layer being made of a tungsten nitride film containing fluorine at an atomic density of 1% to 20%.
A method of manufacturing a semiconductor device including a first conductive layer, an insulating layer having a hole section made through to the first conductive layer, and a second conductive layer formed in the hole section and made of a tungsten nitride film containing fluorine, in a reaction chamber to which a first gas containing tungsten and halogen element, and a second gas containing nitrogen are introduced, comprising the steps of:
- setting a flow amount Q1 of said first gas to 10 to 1000 cc/min, a flow amount Q2 of said second gas to 10 to 1000 cc/min, and a flow amount ratio between said first and second gases to Q1/Q2.gtoreq.1/2;
- and
- supplying said first and second gases, the flow amount of each of which is controlled, into said hole section, thereby forming said tungsten nitride film containing fluorine, by a chemical vapor deposition method.
A method of manufacturing a semiconductor device including a first conductive layer, an insulating layer having a hole section made through to the first conductive layer, and a second conductive layer formed in the hole section and made of a tungsten nitride film containing fluorine, in a reaction chamber to which a first gas containing tungsten and halogen element, and a second gas containing nitrogen are introduced, comprising the steps of:
- rotating a substrate to be processed, placed in said reaction chamber;
- setting a flow amount Q1 of said first gas to 10 to 1000 cc/min, a flow amount Q2 of said second gas to 10 to 1000 cc/min, and a flow amount ratio between said first and second gases to Q1/Q2.gtoreq.1/4;
- and
- supplying said first and second gases, the flow amount of each of which is controlled, into said hole section, thereby forming said tungsten nitride film containing fluorine, by a chemical vapor deposition method.
Dependencies are inferred from the claim text.