Photoelectric converting apparatus
AssigneeCanon Kabushiki Kaisha
InventorsHidekazu Takahashi, Mahito Shinohara
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AssigneeCanon Kabushiki Kaisha
InventorsHidekazu Takahashi, Mahito Shinohara
Estimating the term…
In a CMOS area sensor, in order to enable an image signal of only a portion in the area to be read out on a block unit basis, there is provided a photoelectric converting apparatus of an amplifying type having two-dimensional sensor pixels, a transfer circuit for transferring pixel signals of the sensor pixels, and two-dimensional memory pixels for recording the transferred pixel signals, wherein two switches for writing or resetting are provided for at least ones of the sensor pixels and the memory pixels, one of the switches is controlled by a vertical selection circuit, and the other switch is controlled by a horizontal selection circuit. There is also provided a photoelectric converting apparatus having line sensor pixels, a transfer circuit for transferring pixels of the line sensor, and memory pixels of at least the same number as that of the line sensor pixels for recording an output of the transfer circuit, wherein switches for writing or resetting are provided for at least ones of the line sensor pixels and the memory pixels and are controlled by a selection circuit for selecting a predetermined number of pixels.
A photoelectric converting apparatus of an amplifying type comprising:
A photoelectric converting apparatus comprising:
A photoelectric converting apparatus comprising:
A semiconductor integrated device in which two-dimensional sensor pixels, a transfer circuit for transferring pixel signals of said sensor pixels, and two-dimensional memory pixels for recording said transferred pixel signals are formed by an MOS process, wherein
A semiconductor integrated device comprising:
Dependencies are inferred from the claim text.