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US 5,861,233 AGranted
Pattern forming method by imparting hydrogen atoms and selectively depositing metal film
AssigneeCanon Kabushiki Kaisha
InventorsYasuhiro Sekine, Genzo Momma, Hiroshi Yuzurihara
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Abstract
A pattern forming method comprises subjecting a surface of a semiconductor substrate to a surface treatment for imparting hydrogen atoms, irradiating a desired region of said surface with an energy ray, selectively forming a metal film on a non-irradiated region other than the desired region, and etching said semiconductor substrate using said metal film as a mask.
Claims3
A pattern forming method comprising, in sequence:
- subjecting a surface of a semiconductor substrate to surface treatment for imparting hydrogen atoms,
- irradiating a desired region of said surface with an electron beam, thereby removing hydrogen atoms imparted to the desired region,
- exposing said substrate to ambient air,
- selectively forming an aluminum film on a non-irradiated region other than the desired region by a Chemical Vapor Deposition (CVD) method using alkylaluminum hydride, and etching the desired region of said semiconductor substrate using said aluminum film as a mask to make a trench,
- removing the aluminum film, and
- heating the trench, thereby burying the inside of the trench with an oxide.
3 more elements
Dependencies are inferred from the claim text.