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US 5,859,865 AGranted
Semiconductor laser
AssigneeNEC Corporation
InventorAkihisa Tomita
Life of this patent
Estimating the term…
Abstract
A semiconductor laser includes a substrate and an active layer. The substrate has a lattice constant which falls within the range between 0.565 nm and 0.56 nm. The active layer has a quantum well structure in which a GaInP alloy crystal with a lattice constant larger than the lattice constant of the substrate is formed as a well layer and an AlGaInP alloy crystal with a lattice constant smaller than the lattice constant of the substrate is formed as a barrier layer.
Claims5
A semiconductor laser comprising:
- a substrate having a lattice constant which falls within a range between 0.565 nm and 0.56 nm;
- and an active layer having a quantum well structure in which a GaInP alloy crystal with a lattice constant larger than the lattice constant of said substrate is formed as a well layer and an AlGaInP alloy crystal with a lattice constant smaller than the lattice constant of said substrate is formed as a barrier layer.
A semiconductor laser comprising:
- a substrate;
- a buffer layer stacked on said substrate and having a lattice constant at an uppermost portion which falls within a range between 0.565 nm and 0.56 nm;
- and an active layer having a quantum well structure in which a GaInP alloy crystal with a lattice constant larger than the lattice constant at the uppermost portion of said buffer layer is formed as a well layer and an AlGaInP alloy crystal with a lattice constant smaller than the lattice constant at the uppermost portion of said buffer layer is formed as a barrier layer.
Dependencies are inferred from the claim text.