Method for impurity distribution simulation

A method for simulating an impurity distribution in a multilayer structure having a plurality of layers including at least one crystal layer, said method comprising:

• a) analytically simulating an impurity distribution for each of said plurality of layers to obtain a first impurity distribution profile for said each of said plurality of layers by using impurity distribution moments defined for the each said plurality of layers under a specified condition;
• b) analytically simulating a point defect distribution for said crystal layer to obtain a point defect distribution profile by using said first impurity distribution profile and point defect distribution moments defined for said crystal layer under said specified condition;
• c) simulating a thermal diffusion for each of said plurality of layers to obtain a second impurity distribution profile for the each of said plurality of layers by using said first impurity distribution profile and said point defect distribution profile, wherein step b further comprises:
• b1) calculating a normalized point defect distribution profile;
• and
• b2) shifting said normalized point defect distribution profile in a depthwise direction by a first and a second amounts to form a shifted normalized point defect distribution profile.