Electro-static discharge protection circuit
AssigneeLG Semicon Co., Ltd.
InventorDae Seong Kim
Life of this patent
Estimating the term…
Abstract
An electro-static discharge (ESD) protection circuit for a semiconductor device includes a primary ESD protection circuit including at least two diodes, the primary ESD protection circuit being located between a positive voltage and a negative voltage, and connected to input/output terminals of the semiconductor device, the primary ESD protection circuit bypassing any static electricity applied from the input/output terminals; and a secondary ESD protection circuit connected to the primary ESD protection circuit in parallel, the secondary ESD protection circuit including at least two diodes.
Claims18
An ESD protection circuit for a semiconductor device comprising:
- a primary ESD protection circuit including at least two diodes, the primary ESD protection circuit being located between a positive voltage and a negative voltage, and connected to input/output terminals of the semiconductor device, the primary ESD protection circuit bypassing static electricity applied from the input/output terminals;
- and
- a secondary ESD protection circuit connected to the primary ESD protection circuit in parallel, the secondary ESD protection circuit including at least two diodes in series between the positive voltage and the input/output terminals and between the negative voltage and the input/output terminals, respectively.
The ESD protection circuit as claimed in claimed 1, wherein the primary and secondary ESD protection circuits are formed inside of the semiconductor device.
An ESD protection circuit for a semiconductor device, comprising:
- a primary ESD protection circuit located between a positive voltage and a negative voltage, and connected to input/output terminals of the semiconductor device, the primary ESD protection circuit bypassing static electricity applied from the input/output terminals;
- and
- a secondary ESD protection circuit connected to the primary ESD protection circuit in parallel for bypassing the static electricity, if the static electricity exceeds a predetermined amount.
Dependencies are inferred from the claim text.