Power amplifier circuit with temperature compensating level shifter
AssigneeMotorola, Inc.
InventorGregory Redmond Black
Life of this patent
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AssigneeMotorola, Inc.
InventorGregory Redmond Black
Estimating the term…
A power amplifier circuit (200) for amplifying a radio frequency (RF) signal received at an input (208) into an amplified RF signal at an output (210) includes a coupler circuit (222, 122), a second input (206), a power amplifier (218), and a level shifter (228). The coupler circuit (222, 122) is coupled to the output (210) to detect a level of the amplified RF signal. The second input (206) receives a control signal derived from the detected level. The power amplifier (218) includes a transistor (234/236) having a gate (238/240) coupled to the input (208) and a drain (242/244) coupled to the output (210). The level shifter (228) is coupled to the second input (206) and the gate (238/240) and, responsive to the control signal, supplies a biasing voltage (VGG) to the gate (238/240). The level shifter (228) includes circuitry (255) to minimize temperature sensitivity of the biasing voltage (VGG).
A power amplifier circuit for amplifying a radio frequency (RF) signal into an amplified RF signal, the power amplifier circuit comprising:
A power amplifier circuit for amplifying a radio frequency (RF) signal into an amplified RF signal, the power amplifier circuit comprising:
A power amplifier circuit for amplifying a radio frequency (RF) signal into an amplified RF signal, the power amplifier circuit comprising:
A communication device comprising:
Dependencies are inferred from the claim text.