Optoelectronic diode and component containing same
AssigneeForschungszentrum Julich GmbH
InventorsOlaf Hollricher, Frank Ruders, Christoph Buchal, Hartmut Roskos, Jens Peter Hermanns, Elard Stein Von Kamienski, Klaus Rademacher
Life of this patent
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Abstract
An optoelectronic component has an Al.sub.2 O.sub.3 or Si substrate having a surface on which a buried CoSi.sub.2 layer is provided, a Si layer overlying the buried CoSi.sub.2 layer. A metal layer on a portion of this latter Si layer forms a diode between the metal layer, the underlying portion of the Si layer and the buried CoSi.sub.2 layer and a waveguide for a transparent portion of the metal layer delivers photon energy to the underlying portion of the Si layer.
Claims3
An optoelectronic component comprising:
- an Al.sub.2 O.sub.3 or Si substrate having a surface;
- a buried CoSi.sub.2 layer on said surface;
- an Si layer overlying said buried CoSi.sub.2 layer;
- a metal layer overlying said Si layer and forming a diode with an underlying portion of said Si layer and a region of said buried CoSi.sub.2 layer underlying said portion;
- and
- means for supplying photon energy to said underlying portion of said Si layer in the form of a light waveguide terminating at said underlying portion of said Si layer and flanked by bodies of SiO.sub.2 or CoSi.sub.2.
Dependencies are inferred from the claim text.