Semiconductor device containing a silicon-rich layer
AssigneeIntegrated Device Technology, Inc.
InventorsCheng-Chen Calvin Hsueh, Shih-Ked Lee
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Abstract
A semiconductor device having a controlled resistance value within a predetermined range. The semiconductor device includes a substrate and an oxide layer provided above the substrate. There is also included a first dielectric layer that is silicon-rich above the oxide layer. There is further included a second dielectric layer above the silicon-rich layer.
Claims22
A semiconductor device comprising:
- a) a substrate;
- b) an oxide layer provided above said substrate;
- c) a resistor between said oxide layer and said substrate:
- d) a silicon-rich layer contiguous with substantially all of an entire surface of said oxide layer;
- and
- e) a dielectric layer above said silicon-rich layer.
A semiconductor device comprising:
- a) a substrate;
- b) a TEOS layer above said substrate;
- c) a silicon-rich layer above said TEOS layer;
- and
- d) a dielectric layer above said silicon-rich layer.
The semiconductor device of claim 21, wherein said silicon-rich layer has a refractive index between the range of about 1.47 to about 1.52.
A semiconductor device comprising:
- a) a substrate;
- b) a TEOS layer above said substrate and in contact with substantially all of an entire surface of a silicon-rich layer above said TEOS layer;
- and c) a dielectric layer above said silicon-rich layer.
Dependencies are inferred from the claim text.