Nonvolatile memory device
AssigneeLG Semicon Co., Ltd.
InventorsWoong Lim Choi, Kyeong Man Ra
Life of this patent
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Abstract
A nonvolatile memory device includes a floating gate for storing a charge carrier during programming, a program gate coupled to the floating gate and performing programming by injecting the charge carrier induced from the outside during programming into the floating gate, an erasure gate coupled to the floating gate and emitting the charge carrier stored in the floating gate to the outside during erasure to outside, a control gate coupled to the floating gate and controlling an amount of the charge carrier provided from the program gate to the floating gate during programming, and a transistor coupled to the floating gate and verifying the amount of the charge carrier provided form the program gate during programming, the transistor including a channel region and source and drain regions.
Claims9
A nonvolatile memory device comprising:
- a semiconductor substrate;
- a plurality of bit line regions on the semiconductor substrate in one direction at predetermined intervals;
- a plurality of floating gates arranged between the respective bit line regions over the semiconductor substrate in a matrix arrangement;
- a plurality of erasure lines between the respective floating gates in a direction perpendicular to the bit line regions over the semiconductor substrate;
- a plurality of word lines between the respective erasure lines over the floating gates;
- and
- a plurality of program lines perpendicular to the word lines and between the respective bit line regions.
Dependencies are inferred from the claim text.