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US 5,859,450 AGranted
Dark current reducing guard ring
AssigneeIntel Corporation
InventorsLawrence T. Clark, Mark A. Beiley
Life of this patent
Estimating the term…
Abstract
A photodiode is provided. The photodiode includes an insulative region (IR) that permits passage of light therethrough. The photodiode also includes a substrate region of a first conductivity type and a well region of a second conductivity type. The well is formed within the substrate, beneath the IR. The well is demarcated from the substrate by a first surface. The photodiode further includes a heavily doped region (HDR) of the second conductivity type. The HDR is formed within the IR at a first position. The first surface meets the HDR at substantially the first position.
Claims23
A photodiode comprising:
- an insulative region (IR) to permit passage of light therethrough;
- a substrate region of a first conductivity type;
- a well region of a second conductivity type, formed within the substrate and beneath said IR, the well demarcated from the substrate by a first surface;
- and
- a heavily doped region (HDR) of said second conductivity type, formed within said IR at a first position, said first surface meeting said HDR at substantially the first position.
2 more elements
An active pixel sensor array comprising:
- a photocell electrically responsive to light exposure, said photo cell including a photodiode that includes,
- a substrate region of a first conductivity type;
- an insulative region (IR), formed within the substrate, permitting passage of light therethrough;
- a well region of a second conductivity type, formed within the substrate and beneath said IR, the well being demarcated from the substrate by a first surface;
- and
- a heavily doped region (HDR) of said second conductivity type, formed within said IR at a first position, said first surface meeting said HDR at substantially the first position and reset circuitry coupled to said photodiode, to initialize the photodiode;
- and
- read out circuitry, coupled to the photodiode, to read an electrical signal representation of detected light.
5 more elements
A photodiode comprising:
- a semiconductor substrate region of a first conductivity type;
- an insulative region (IR), formed within the substrate, permitting passage of light therethrough
- a semiconductor well region of a second conductivity type, formed within the substrate and beneath said IR, the well demarcated from the substrate by a first surface;
- and
- a heavily doped region (HDR) of said second conductivity type, formed within said IR, said HDR surrounding a first portion of said IR to form a guard ring, said first surface intersecting said HDR.
2 more elements
A photodiode comprising:
- a semiconductor substrate region of a first conductivity type;
- an electrically insulative region (IR), formed within the substrate, permitting passage of light therethrough, said IR having a first width;
- a semiconductor well region of a second conductivity type, formed within the substrate and beneath said IR, said well having a second width larger than said first width, the well demarcated from the substrate by a first surface;
- and
- a gate oxide region formed upon the substrate and surrounding the IR, said first surface meeting said gate oxide.
2 more elements
An active pixel sensor array comprising;
- a plurality of photodiodes, each photodiode including an insulative region (IR) to permit passage of light therethrough;
- a substrate region of a first conductivity type;
- a well region of a second conductivity type, formed within the substrate and beneath said IR, the well demarcated from the substrate by a first surface;
- and
- a heavily doped region (HDR) of said second conductivity type, formed within said IR at a first position, said first surface meeting said HDR at substantially the first position.
2 more elements
An imaging device comprising:
- a control device;
- an active pixel sensor array coupled to said control device including an insulative region (IR) to permit passage of light therethrough;
- a substrate region of a first conductivity type;
- a well region of a second conductivity type, formed within the substrate and beneath said IR, the well demarcated from the substrate by a first surface;
- a heavily doped region (HDR) of said second conductivity type, formed within said IR at a first position, said first surface meeting said HDR at substantially the first position;
- and
- a post processing device coupled to said control device and to said active pixel sensor array.
4 more elements
Dependencies are inferred from the claim text.