Semiconducting ceramic compounds having negative resistance-temperature characteristics with critical temperatures
AssigneeMurata Manufacturing Co., Ltd.
InventorsTerunobu Ishikawa, Akinori Nakayama, Hiroshi Takagi
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Abstract
A semiconducting ceramic having negative resistance-temperature characteristics and a critical temperature consisting essentially of a rare-earth transition element oxide which is an oxide of a combination of samarium and nickel, wherein the samarium is partially replaced with Ln which is at least one other element selected from the group consisting of bismuth and rare-earth elements excluding lanthanum and cerium.
Claims17
A semiconducting ceramic having negative resistance-temperature characteristics and a critical temperature consisting essentially of a rare-earth transition element oxide which is an oxide of a combination of samarium and nickel, wherein the samarium is partially replaced with Ln which is at least one other element selected from the group consisting of bismuth and rare-earth elements excluding lanthanum and cerium.
An electrical device selected from the group consisting of rush current preventing device, soft-start control device and temperature-sensing device, and which comprising a semiconductor ceramic having negative resistance-temperature characteristics and a critical temperature consisting essentially of a rare-earth transition element oxide which is an oxide of a combination of Ln and nickel (LnNi), wherein Ln is at least one element selected from the group consisting of bismuth and rare-earth elements excluding cerium.
A semiconducting ceramic having negative resistance-temperature characteristics and a critical temperature of the formula Sm.sub.0.98 NiO.sub.3.
Dependencies are inferred from the claim text.